TY - JOUR
T1 - Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures
T2 - Structural and optical properties
AU - Xu, J.
AU - Towe, E.
AU - Yuan, Q.
AU - Hull, R.
N1 - Funding Information:
This work was supported by the Army Research Office.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The use of beryllium as an acceptor at high doping levels in (1 1 0)GaAs-based heterostructures is found to be deleterious to the structural and optical properties of these epi-layers. This may limit the use of beryllium as a p-type dopant on the (1 1 0) surface. Because silicon is amphoteric on the (1 1 0), it can be used as an alternative p-type dopant, in addition to its traditional role as an n-type dopant. Transmission electron microscopy, optical absorption, and luminescence data indicate that high quality multiple quantum well structures with p-type GaAs buffer layers doped with silicon, rather than beryllium, can be grown.
AB - The use of beryllium as an acceptor at high doping levels in (1 1 0)GaAs-based heterostructures is found to be deleterious to the structural and optical properties of these epi-layers. This may limit the use of beryllium as a p-type dopant on the (1 1 0) surface. Because silicon is amphoteric on the (1 1 0), it can be used as an alternative p-type dopant, in addition to its traditional role as an n-type dopant. Transmission electron microscopy, optical absorption, and luminescence data indicate that high quality multiple quantum well structures with p-type GaAs buffer layers doped with silicon, rather than beryllium, can be grown.
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U2 - 10.1016/S0022-0248(98)00871-9
DO - 10.1016/S0022-0248(98)00871-9
M3 - Article
AN - SCOPUS:0032761092
SN - 0022-0248
VL - 196
SP - 26
EP - 32
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -