Abstract
The results of surface characterization of bias-pretreated SiO2 using x-ray photoemission spectroscopy and Raman spectroscopy are presented. These results suggest that the formation of SiC on the substrate surface during bias-enhanced nucleation (BEN) facilitates diamond nucleation. Also, it is confirmed that relatively high diamond nucleation densities can be achieved on fused SiO2 by BEN.
Original language | English (US) |
---|---|
Pages (from-to) | 716-718 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 5 |
DOIs | |
State | Published - Aug 4 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)