Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
P. M. Lenahan, M. A. Anders, R. J. Waskiewicz, A. J. Lelis
Dive into the research topics of 'Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance'. Together they form a unique fingerprint.