TY - JOUR
T1 - Brain-Inspired Reservoir Computing Using Memristors with Tunable Dynamics and Short-Term Plasticity
AU - Armendarez, Nicholas X.
AU - Mohamed, Ahmed S.
AU - Dhungel, Anurag
AU - Hossain, Md Razuan
AU - Hasan, Md Sakib
AU - Najem, Joseph S.
N1 - Publisher Copyright:
© 2024 American Chemical Society
PY - 2024/2/7
Y1 - 2024/2/7
N2 - Recent advancements in reservoir computing (RC) research have created a demand for analogue devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates as information-processing devices or reservoirs for temporal classification and prediction tasks. Previous implementations relied on nominally identical memristors that applied the same nonlinear transformation to the input data, which is not enough to achieve a rich state space. To address this limitation, researchers either diversified the data encoding across multiple memristors or harnessed the stochastic device-to-device variability among the memristors. However, this approach requires additional preprocessing steps and leads to synchronization issues. Instead, it is preferable to encode the data once and pass them through a reservoir layer consisting of memristors with distinct dynamics. Here, we demonstrate that ion-channel-based memristors with voltage-dependent dynamics can be controllably and predictively tuned through the voltage or adjustment of the ion channel concentration to exhibit diverse dynamic properties. We show, through experiments and simulations, that reservoir layers constructed with a small number of distinct memristors exhibit significantly higher predictive and classification accuracies with a single data encoding. We found that for a second-order nonlinear dynamical system prediction task, the varied memristor reservoir experimentally achieved an impressive normalized mean square error of 1.5 × 10-3, using only five distinct memristors. Moreover, in a neural activity classification task, a reservoir of just three distinct memristors experimentally attained an accuracy of 96.5%. This work lays the foundation for next-generation physical RC systems that can exploit the complex dynamics of their diverse building blocks to achieve increased signal processing capabilities.
AB - Recent advancements in reservoir computing (RC) research have created a demand for analogue devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates as information-processing devices or reservoirs for temporal classification and prediction tasks. Previous implementations relied on nominally identical memristors that applied the same nonlinear transformation to the input data, which is not enough to achieve a rich state space. To address this limitation, researchers either diversified the data encoding across multiple memristors or harnessed the stochastic device-to-device variability among the memristors. However, this approach requires additional preprocessing steps and leads to synchronization issues. Instead, it is preferable to encode the data once and pass them through a reservoir layer consisting of memristors with distinct dynamics. Here, we demonstrate that ion-channel-based memristors with voltage-dependent dynamics can be controllably and predictively tuned through the voltage or adjustment of the ion channel concentration to exhibit diverse dynamic properties. We show, through experiments and simulations, that reservoir layers constructed with a small number of distinct memristors exhibit significantly higher predictive and classification accuracies with a single data encoding. We found that for a second-order nonlinear dynamical system prediction task, the varied memristor reservoir experimentally achieved an impressive normalized mean square error of 1.5 × 10-3, using only five distinct memristors. Moreover, in a neural activity classification task, a reservoir of just three distinct memristors experimentally attained an accuracy of 96.5%. This work lays the foundation for next-generation physical RC systems that can exploit the complex dynamics of their diverse building blocks to achieve increased signal processing capabilities.
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U2 - 10.1021/acsami.3c16003
DO - 10.1021/acsami.3c16003
M3 - Article
C2 - 38271202
AN - SCOPUS:85184660506
SN - 1944-8244
VL - 16
SP - 6176
EP - 6188
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 5
ER -