Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

G. Bersuker; D. Heh; C. Young; H. Park; P. Khanal; L. Larcher; A. Padovani; P. Lenahan; J. Ryan; B. H. Lee; H. Tseng; R. Jammy

doi:10.1109/IEDM.2008.4796816

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

72 Scopus citations

Abstract

We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO ₂ interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

Original language	English (US)
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796816
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	12/15/08 → 12/17/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796816

Cite this

Bersuker, G., Heh, D., Young, C., Park, H., Khanal, P., Larcher, L., Padovani, A., Lenahan, P., Ryan, J., Lee, B. H., Tseng, H., & Jammy, R. (2008). Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796816 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796816

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title = "Breakdown in the metal/high-k gate stack: Identifying the {"}weak link{"} in the multilayer dielectric",

abstract = "We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.",

author = "G. Bersuker and D. Heh and C. Young and H. Park and P. Khanal and L. Larcher and A. Padovani and P. Lenahan and J. Ryan and Lee, {B. H.} and H. Tseng and R. Jammy",

year = "2008",

doi = "10.1109/IEDM.2008.4796816",

language = "English (US)",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Bersuker, G, Heh, D, Young, C, Park, H, Khanal, P, Larcher, L, Padovani, A, Lenahan, P, Ryan, J, Lee, BH, Tseng, H & Jammy, R 2008, Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796816, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 12/15/08. https://doi.org/10.1109/IEDM.2008.4796816

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. / Bersuker, G.; Heh, D.; Young, C. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796816 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Breakdown in the metal/high-k gate stack

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

AU - Bersuker, G.

AU - Heh, D.

AU - Young, C.

AU - Park, H.

AU - Khanal, P.

AU - Larcher, L.

AU - Padovani, A.

AU - Lenahan, P.

AU - Ryan, J.

AU - Lee, B. H.

AU - Tseng, H.

AU - Jammy, R.

PY - 2008

Y1 - 2008

N2 - We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

AB - We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

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U2 - 10.1109/IEDM.2008.4796816

DO - 10.1109/IEDM.2008.4796816

M3 - Conference contribution

AN - SCOPUS:64549083594

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

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