Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

G. Bersuker; D. Heh; C. Young; H. Park; P. Khanal; L. Larcher; A. Padovani; P. Lenahan; J. Ryan; B. H. Lee; H. Tseng; R. Jammy

doi:10.1109/IEDM.2008.4796816

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

G. Bersuker
, D. Heh
, C. Young
, H. Park
, P. Khanal
, L. Larcher
, A. Padovani
, P. Lenahan
, J. Ryan
, B. H. Lee
, H. Tseng
, R. Jammy

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

73 Scopus citations

Abstract

We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO ₂ interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

Original language	English (US)
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796816
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	12/15/08 → 12/17/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2008.4796816

Cite this

Bersuker, G., Heh, D., Young, C., Park, H., Khanal, P., Larcher, L., Padovani, A., Lenahan, P., Ryan, J., Lee, B. H., Tseng, H., & Jammy, R. (2008). Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796816 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796816

@inproceedings{d9dd688e986444acb4ea318cef2faa24,

title = "Breakdown in the metal/high-k gate stack: Identifying the {"}weak link{"} in the multilayer dielectric",

abstract = "We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.",

author = "G. Bersuker and D. Heh and C. Young and H. Park and P. Khanal and L. Larcher and A. Padovani and P. Lenahan and J. Ryan and Lee, \{B. H.\} and H. Tseng and R. Jammy",

year = "2008",

doi = "10.1109/IEDM.2008.4796816",

language = "English (US)",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Bersuker, G, Heh, D, Young, C, Park, H, Khanal, P, Larcher, L, Padovani, A, Lenahan, P, Ryan, J, Lee, BH, Tseng, H & Jammy, R 2008, Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796816, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 12/15/08. https://doi.org/10.1109/IEDM.2008.4796816

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. / Bersuker, G.; Heh, D.; Young, C. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796816 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Breakdown in the metal/high-k gate stack

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

AU - Bersuker, G.

AU - Heh, D.

AU - Young, C.

AU - Park, H.

AU - Khanal, P.

AU - Larcher, L.

AU - Padovani, A.

AU - Lenahan, P.

AU - Ryan, J.

AU - Lee, B. H.

AU - Tseng, H.

AU - Jammy, R.

PY - 2008

Y1 - 2008

N2 - We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

AB - We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

UR - https://www.scopus.com/pages/publications/64549083594

UR - https://www.scopus.com/pages/publications/64549083594#tab=citedBy

U2 - 10.1109/IEDM.2008.4796816

DO - 10.1109/IEDM.2008.4796816

M3 - Conference contribution

AN - SCOPUS:64549083594

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this