Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films

J. T. Yount; P. M. Lenahan

doi:10.1016/0022-3093(93)91183-4

Bridging nitrogen dangling bond centers and electron trapping in amorphous NH₃-nitrided and reoxidized nitrided oxide films

J. T. Yount, P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH₃-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)₂NH.

Original language	English (US)
Pages (from-to)	1069-1072
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(93)91183-4
State	Published - Dec 2 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0022-3093(93)91183-4

Cite this

@article{85146b4f5d1a4b26b03316be01506bb1,

title = "Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films",

abstract = "We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.",

author = "Yount, {J. T.} and Lenahan, {P. M.}",

year = "1993",

month = dec,

day = "2",

doi = "10.1016/0022-3093(93)91183-4",

language = "English (US)",

volume = "164-166",

pages = "1069--1072",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 2",

}

TY - JOUR

T1 - Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films

AU - Yount, J. T.

AU - Lenahan, P. M.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.

AB - We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.

UR - http://www.scopus.com/inward/record.url?scp=0027906976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027906976&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(93)91183-4

DO - 10.1016/0022-3093(93)91183-4

M3 - Article

AN - SCOPUS:0027906976

SN - 0022-3093

VL - 164-166

SP - 1069

EP - 1072

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Bridging nitrogen dangling bond centers and electron trapping in amorphous NH₃-nitrided and reoxidized nitrided oxide films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this