Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

We employ focused ion beam patterning of single crystal Si(100) surfaces to template the assembly of Ge(Si) nanostructure arrays. The evolution and final structures of the templated arrays are determined by combinations of transmission electron, low energy electron microscope, focused ion beam and scanning probe microscopies. It is shown how the positions of individual nanostructures may be controlled to the order of 10 nm. However, to achieve controlled spacings between elements that are in the 10 nm range requires careful matching of the characteristic lengths scales of self assembly mechanisms to the length scales of the external lithographic "forcing functions".