Broken-gap tunnel MOSFET: A constant-slope Sub-60-mV/decade transistor

Joshua T. Smith, Saptarshi Das, Joerg Appenzeller

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


We propose a novel low-power transistor device, called the broken-gap tunnel MOSFET (BG-TMOS), which is capable of achieving constant sub-60-mV/decade inverse subthreshold slopes S at room temperature. Structurally, the device resembles an ungated broken-gap heterostructure Esaki region in series with a conventional MOSFET. The gate voltage independence of the energy spacing between the conduction and valence bands at the heterojunction is the key to producing a constant S < 60 mV/decade, which can be tuned by properly engineering the material composition at this interface. In contrast to the tunneling field-effect transistor, the tunnel junction in the BG-TMOS is independent of the electrostatics in the channel region, enabling the use of 2-D architectures for improved current drive without degradation of S attractive features from a circuit design perspective. Simulations show that the BG-TMOS can exceed MOSFET performance at low supply voltages.

Original languageEnglish (US)
Article number5977000
Pages (from-to)1367-1369
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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