TY - JOUR
T1 - Broken-gap tunnel MOSFET
T2 - A constant-slope Sub-60-mV/decade transistor
AU - Smith, Joshua T.
AU - Das, Saptarshi
AU - Appenzeller, Joerg
N1 - Funding Information:
Manuscript received June 8, 2011; revised June 28, 2011; accepted July 11, 2011. Date of publication August 7, 2011; date of current version September 28, 2011. This work was supported in part by the Center for Functional Engineered Nano Architectonics under Grant 104295. The review of this letter was arranged by Editor M. Passlack.
PY - 2011/10
Y1 - 2011/10
N2 - We propose a novel low-power transistor device, called the broken-gap tunnel MOSFET (BG-TMOS), which is capable of achieving constant sub-60-mV/decade inverse subthreshold slopes S at room temperature. Structurally, the device resembles an ungated broken-gap heterostructure Esaki region in series with a conventional MOSFET. The gate voltage independence of the energy spacing between the conduction and valence bands at the heterojunction is the key to producing a constant S < 60 mV/decade, which can be tuned by properly engineering the material composition at this interface. In contrast to the tunneling field-effect transistor, the tunnel junction in the BG-TMOS is independent of the electrostatics in the channel region, enabling the use of 2-D architectures for improved current drive without degradation of S attractive features from a circuit design perspective. Simulations show that the BG-TMOS can exceed MOSFET performance at low supply voltages.
AB - We propose a novel low-power transistor device, called the broken-gap tunnel MOSFET (BG-TMOS), which is capable of achieving constant sub-60-mV/decade inverse subthreshold slopes S at room temperature. Structurally, the device resembles an ungated broken-gap heterostructure Esaki region in series with a conventional MOSFET. The gate voltage independence of the energy spacing between the conduction and valence bands at the heterojunction is the key to producing a constant S < 60 mV/decade, which can be tuned by properly engineering the material composition at this interface. In contrast to the tunneling field-effect transistor, the tunnel junction in the BG-TMOS is independent of the electrostatics in the channel region, enabling the use of 2-D architectures for improved current drive without degradation of S attractive features from a circuit design perspective. Simulations show that the BG-TMOS can exceed MOSFET performance at low supply voltages.
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U2 - 10.1109/LED.2011.2162220
DO - 10.1109/LED.2011.2162220
M3 - Article
AN - SCOPUS:80053571404
SN - 0741-3106
VL - 32
SP - 1367
EP - 1369
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
M1 - 5977000
ER -