C-axis oriented epitaxial BaTiO 3 films on (001) Si

V. Vaithyanathan, J. Lettieri, W. Tian, A. Sharan, A. Vasudevarao, Y. L. Li, A. Kochhar, H. Ma, J. Levy, P. Zschack, J. C. Woicik, L. Q. Chen, V. Gopalan, D. G. Schlom

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106 Scopus citations


c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

Original languageEnglish (US)
Article number024108
JournalJournal of Applied Physics
Issue number2
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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