C-axis oriented epitaxial BaTiO 3 films on (001) Si

V. Vaithyanathan; J. Lettieri; W. Tian; A. Sharan; A. Vasudevarao; Y. L. Li; A. Kochhar; H. Ma; J. Levy; P. Zschack; J. C. Woicik; L. Q. Chen; V. Gopalan; D. G. Schlom

doi:10.1063/1.2203208

C-axis oriented epitaxial BaTiO ₃ films on (001) Si

V. Vaithyanathan
, J. Lettieri
, W. Tian
, A. Sharan
, A. Vasudevarao
, Y. L. Li
, A. Kochhar
, H. Ma
, J. Levy
, P. Zschack
, J. C. Woicik
, L. Q. Chen
, V. Gopalan
, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

121 Scopus citations

Abstract

c-axis oriented epitaxial films of the ferroelectric BaTiO ₃ have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO ₃ |(001) Si and [100] BaTiO ₃∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO ₃ film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO ₃ and silicon is overcome by introducing a relaxed buffer layer of Ba _xSr _1-xTiO ₃ between the BaTiO ₃ film and silicon substrate. The rocking curve widths of the BaTiO ₃ films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO ₃ film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

Original language	English (US)
Article number	024108
Journal	Journal of Applied Physics
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.2203208
State	Published - 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2203208

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@article{b272070860db4eb7935459774e1a4623,

title = "C-axis oriented epitaxial BaTiO 3 films on (001) Si",

abstract = "c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.",

author = "V. Vaithyanathan and J. Lettieri and W. Tian and A. Sharan and A. Vasudevarao and Li, \{Y. L.\} and A. Kochhar and H. Ma and J. Levy and P. Zschack and Woicik, \{J. C.\} and Chen, \{L. Q.\} and V. Gopalan and Schlom, \{D. G.\}",

note = "Funding Information: The authors gratefully acknowledge the financial support of DARPA QuIST through Contract No. DAAD-19-01-1-0650, the National Science Foundation through Grant Nos. DMR-0507146, DMR-0512165, and DMR-0349632, NSF-MRSEC center at Pennsylvania State University, and the MARCO, MSD Focus Center. The UNICAT facility at the Advanced Photon Source (APS) is supported by the U.S. DOE under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign, the Oak Ridge National Laboratory (U.S. DOE Contract No. DE-AC05-00OR22725 with UT-Battelle LLC), the National Institute of Standards and Technology (U.S. Department of Commerce) and UOP LLC. The APS is supported by the U.S. DOE, Basic Energy Sciences, Office of Science under Contract No. W-31-109-ENG-38.",

year = "2006",

doi = "10.1063/1.2203208",

language = "English (US)",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - C-axis oriented epitaxial BaTiO 3 films on (001) Si

AU - Vaithyanathan, V.

AU - Lettieri, J.

AU - Tian, W.

AU - Sharan, A.

AU - Vasudevarao, A.

AU - Li, Y. L.

AU - Kochhar, A.

AU - Ma, H.

AU - Levy, J.

AU - Zschack, P.

AU - Woicik, J. C.

AU - Chen, L. Q.

AU - Gopalan, V.

AU - Schlom, D. G.

N1 - Funding Information: The authors gratefully acknowledge the financial support of DARPA QuIST through Contract No. DAAD-19-01-1-0650, the National Science Foundation through Grant Nos. DMR-0507146, DMR-0512165, and DMR-0349632, NSF-MRSEC center at Pennsylvania State University, and the MARCO, MSD Focus Center. The UNICAT facility at the Advanced Photon Source (APS) is supported by the U.S. DOE under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign, the Oak Ridge National Laboratory (U.S. DOE Contract No. DE-AC05-00OR22725 with UT-Battelle LLC), the National Institute of Standards and Technology (U.S. Department of Commerce) and UOP LLC. The APS is supported by the U.S. DOE, Basic Energy Sciences, Office of Science under Contract No. W-31-109-ENG-38.

PY - 2006

Y1 - 2006

N2 - c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

AB - c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

UR - https://www.scopus.com/pages/publications/33746842197

UR - https://www.scopus.com/pages/publications/33746842197#tab=citedBy

U2 - 10.1063/1.2203208

DO - 10.1063/1.2203208

M3 - Article

AN - SCOPUS:33746842197

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 024108

ER -

C-axis oriented epitaxial BaTiO ₃ films on (001) Si

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