TY - GEN
T1 - Calculation of conduction power losses in double flying capacitor multicell converter
AU - Khoshkbar Sadigh, Arash
AU - Dargahi, Vahid
AU - Corzine, Keith
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/8
Y1 - 2015/5/8
N2 - This paper proposes a detailed approach to analytically calculate the conduction power losses in double flying capacitor multicell (DFCM) converter. For this purpose, the rms and average current flowing through power switches and diodes in both high-frequency and low-frequency cells of DFCM converter are analytically calculated in detail in terms of the load peak current, load power factor and modulation index. Afterwards, an approach to obtain the parameters of the power switches and diodes from the datasheet and use them for calculation of conduction power losses is discussed. Finally, as an example, a 14MVA 3.3kV three-phase 9-level (line-to-line) DFCM converter is simulated and the obtained simulation results of the rms and average current flowing through the power switches and diodes matched with numerical results of the derived equations which validates the derived equations. Furthermore, its conduction power losses is analytically calculated using the presented equations by considering parameters of high-power switches (IGCT and IGBT modules) available in the market from ABB.
AB - This paper proposes a detailed approach to analytically calculate the conduction power losses in double flying capacitor multicell (DFCM) converter. For this purpose, the rms and average current flowing through power switches and diodes in both high-frequency and low-frequency cells of DFCM converter are analytically calculated in detail in terms of the load peak current, load power factor and modulation index. Afterwards, an approach to obtain the parameters of the power switches and diodes from the datasheet and use them for calculation of conduction power losses is discussed. Finally, as an example, a 14MVA 3.3kV three-phase 9-level (line-to-line) DFCM converter is simulated and the obtained simulation results of the rms and average current flowing through the power switches and diodes matched with numerical results of the derived equations which validates the derived equations. Furthermore, its conduction power losses is analytically calculated using the presented equations by considering parameters of high-power switches (IGCT and IGBT modules) available in the market from ABB.
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U2 - 10.1109/APEC.2015.7104677
DO - 10.1109/APEC.2015.7104677
M3 - Conference contribution
AN - SCOPUS:84937957754
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2351
EP - 2357
BT - APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
Y2 - 15 March 2015 through 19 March 2015
ER -