Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

M. B. Stone; K. C. Ku; S. J. Potashnik; B. L. Sheu; N. Samarth; P. Schiffer

doi:10.1063/1.1629376

Capping-induced suppression of annealing effects on Ga_1-xMn_xAs epilayers

M. B. Stone, K. C. Ku, S. J. Potashnik, B. L. Sheu, N. Samarth, P. Schiffer

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Abstract

The effects of annealing on Ga_1-xMn_xAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses T_C in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

Original language	English (US)
Pages (from-to)	4568-4570
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1629376
State	Published - Dec 1 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1629376

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abstract = "The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.",

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AU - Stone, M. B.

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Sheu, B. L.

AU - Samarth, N.

AU - Schiffer, P.

PY - 2003/12/1

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N2 - The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

AB - The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

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Capping-induced suppression of annealing effects on Ga_1-xMn_xAs epilayers

Abstract

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