Carbon-doped MgB2 thin films grown by hybrid physical-chemical vapor deposition

A. V. Pogrebnyakov; J. M. Redwing; J. E. Giencke; C. B. Eom; V. Vaithyanathan; D. G. Schlom; A. Soukiassian; S. B. Mi; C. L. Jia; J. Chen; Y. F. Hu; Y. Cui; Qi Li; X. X. Xi

doi:10.1109/TASC.2005.848871

Carbon-doped MgB₂ thin films grown by hybrid physical-chemical vapor deposition

A. V. Pogrebnyakov, J. M. Redwing, J. E. Giencke, C. B. Eom, V. Vaithyanathan, D. G. Schlom, A. Soukiassian, S. B. Mi, C. L. Jia, J. Chen, Y. F. Hu, Y. Cui, Qi Li, X. X. Xi

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Abstract

Carbon-doped MgB₂ thin films have been produced with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, to the carrier gas. The amount of the carbon added, thus the carbon content in the films, was controlled by the flow rate of a secondary hydrogen gas flow through the precursor bubbler. X-ray diffraction and electron microscopy showed that the carbon-doped MgB₂ films are textured with c-axis oriented columnar nano-grains and highly resistive amorphous areas at the grain boundaries. When the amount of carbon in the films increases, the resistivity increases dramatically while T_c decreases much more slowly as the current-carrying cross section is reduced by the grain boundaries. The temperature-dependent part of the resistivity, Δρ = ρ(300 K) - ρ(50 K), increases only modestly until the highly resistive grain boundaries completely cut off the conducting path. The impact of the reduced cross section on critical current density J_c is discussed.

Original language	English (US)
Pages (from-to)	3321-3324
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.848871
State	Published - Jun 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2005.848871

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Pogrebnyakov, A. V., Redwing, J. M., Giencke, J. E., Eom, C. B., Vaithyanathan, V., Schlom, D. G., Soukiassian, A., Mi, S. B., Jia, C. L., Chen, J., Hu, Y. F., Cui, Y., Li, Q., & Xi, X. X. (2005). Carbon-doped MgB₂ thin films grown by hybrid physical-chemical vapor deposition. IEEE Transactions on Applied Superconductivity, 15(2 PART III), 3321-3324. https://doi.org/10.1109/TASC.2005.848871

@article{7ac21fe7138546d09175d8f55d075c10,

title = "Carbon-doped MgB2 thin films grown by hybrid physical-chemical vapor deposition",

abstract = "Carbon-doped MgB2 thin films have been produced with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, to the carrier gas. The amount of the carbon added, thus the carbon content in the films, was controlled by the flow rate of a secondary hydrogen gas flow through the precursor bubbler. X-ray diffraction and electron microscopy showed that the carbon-doped MgB2 films are textured with c-axis oriented columnar nano-grains and highly resistive amorphous areas at the grain boundaries. When the amount of carbon in the films increases, the resistivity increases dramatically while Tc decreases much more slowly as the current-carrying cross section is reduced by the grain boundaries. The temperature-dependent part of the resistivity, Δρ = ρ(300 K) - ρ(50 K), increases only modestly until the highly resistive grain boundaries completely cut off the conducting path. The impact of the reduced cross section on critical current density Jc is discussed.",

author = "Pogrebnyakov, {A. V.} and Redwing, {J. M.} and Giencke, {J. E.} and Eom, {C. B.} and V. Vaithyanathan and Schlom, {D. G.} and A. Soukiassian and Mi, {S. B.} and Jia, {C. L.} and J. Chen and Hu, {Y. F.} and Y. Cui and Qi Li and Xi, {X. X.}",

note = "Funding Information: Manuscript received October 3, 2004. The work of X. X. Xi was supported by the Office of Naval Research (ONR) under Grant N00014-00-1-0294 and by the National Science Foundation (NSF) under Grant DMR-0306746 and Grant DMR-0103354. The work of J. M. Redwing was supported by the ONR under Grant N0014-01-1-0006 and by the NSF under Grant DMR-0306746. The work of C. B. Eom was supported by the MRSEC for Nanostructure Materials at the University of Wisconsin. The work of D. G. Schlom was supported by the NSF under Grant DMR-0103354 and the U.S. Department of Energy under Grant DE-FG02-03ER46063. The work Q. Li was supported by the NSF under Grant DMR-0405502.",

year = "2005",

month = jun,

doi = "10.1109/TASC.2005.848871",

language = "English (US)",

volume = "15",

pages = "3321--3324",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2 PART III",

}

Pogrebnyakov, AV, Redwing, JM, Giencke, JE, Eom, CB, Vaithyanathan, V, Schlom, DG, Soukiassian, A, Mi, SB, Jia, CL, Chen, J, Hu, YF, Cui, Y, Li, Q & Xi, XX 2005, 'Carbon-doped MgB₂ thin films grown by hybrid physical-chemical vapor deposition', IEEE Transactions on Applied Superconductivity, vol. 15, no. 2 PART III, pp. 3321-3324. https://doi.org/10.1109/TASC.2005.848871

TY - JOUR

T1 - Carbon-doped MgB2 thin films grown by hybrid physical-chemical vapor deposition

AU - Pogrebnyakov, A. V.

AU - Redwing, J. M.

AU - Giencke, J. E.

AU - Eom, C. B.

AU - Vaithyanathan, V.

AU - Schlom, D. G.

AU - Soukiassian, A.

AU - Mi, S. B.

AU - Jia, C. L.

AU - Chen, J.

AU - Hu, Y. F.

AU - Cui, Y.

AU - Li, Qi

AU - Xi, X. X.

N1 - Funding Information: Manuscript received October 3, 2004. The work of X. X. Xi was supported by the Office of Naval Research (ONR) under Grant N00014-00-1-0294 and by the National Science Foundation (NSF) under Grant DMR-0306746 and Grant DMR-0103354. The work of J. M. Redwing was supported by the ONR under Grant N0014-01-1-0006 and by the NSF under Grant DMR-0306746. The work of C. B. Eom was supported by the MRSEC for Nanostructure Materials at the University of Wisconsin. The work of D. G. Schlom was supported by the NSF under Grant DMR-0103354 and the U.S. Department of Energy under Grant DE-FG02-03ER46063. The work Q. Li was supported by the NSF under Grant DMR-0405502.

PY - 2005/6

Y1 - 2005/6

N2 - Carbon-doped MgB2 thin films have been produced with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, to the carrier gas. The amount of the carbon added, thus the carbon content in the films, was controlled by the flow rate of a secondary hydrogen gas flow through the precursor bubbler. X-ray diffraction and electron microscopy showed that the carbon-doped MgB2 films are textured with c-axis oriented columnar nano-grains and highly resistive amorphous areas at the grain boundaries. When the amount of carbon in the films increases, the resistivity increases dramatically while Tc decreases much more slowly as the current-carrying cross section is reduced by the grain boundaries. The temperature-dependent part of the resistivity, Δρ = ρ(300 K) - ρ(50 K), increases only modestly until the highly resistive grain boundaries completely cut off the conducting path. The impact of the reduced cross section on critical current density Jc is discussed.

AB - Carbon-doped MgB2 thin films have been produced with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, to the carrier gas. The amount of the carbon added, thus the carbon content in the films, was controlled by the flow rate of a secondary hydrogen gas flow through the precursor bubbler. X-ray diffraction and electron microscopy showed that the carbon-doped MgB2 films are textured with c-axis oriented columnar nano-grains and highly resistive amorphous areas at the grain boundaries. When the amount of carbon in the films increases, the resistivity increases dramatically while Tc decreases much more slowly as the current-carrying cross section is reduced by the grain boundaries. The temperature-dependent part of the resistivity, Δρ = ρ(300 K) - ρ(50 K), increases only modestly until the highly resistive grain boundaries completely cut off the conducting path. The impact of the reduced cross section on critical current density Jc is discussed.

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DO - 10.1109/TASC.2005.848871

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EP - 3324

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 PART III

ER -

Carbon-doped MgB₂ thin films grown by hybrid physical-chemical vapor deposition

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