Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters

Samarendra P. Singh; Y. N. Mohapatra; Sanjay Rangan; S. Ashok

Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters

Samarendra P. Singh, Y. N. Mohapatra, Sanjay Rangan, S. Ashok

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.

Original language	English (US)
Pages (from-to)	1025-1029
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 II
State	Published - 2002
Event	Physics of Semiconductor Devices - Delhi, India Duration: Dec 11 2001 → Dec 15 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

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title = "Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters",

abstract = "We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.",

author = "Singh, {Samarendra P.} and Mohapatra, {Y. N.} and Sanjay Rangan and S. Ashok",

year = "2002",

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pages = "1025--1029",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

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TY - JOUR

T1 - Carrier dynamics at deep traps in ion implanted silicon

T2 - Physics of Semiconductor Devices

AU - Singh, Samarendra P.

AU - Mohapatra, Y. N.

AU - Rangan, Sanjay

AU - Ashok, S.

PY - 2002

Y1 - 2002

N2 - We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.

AB - We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.

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M3 - Conference article

AN - SCOPUS:0036405886

SN - 0277-786X

VL - 4746 II

SP - 1025

EP - 1029

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 11 December 2001 through 15 December 2001

ER -

Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters

Abstract

All Science Journal Classification (ASJC) codes

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