Carrier transport in amorphous SiC/crystalline silicon heterojunctions

Keyphrases

• Additional Holes 33%
• Amorphous SiC 100%
• Bias Current 33%
• Bias Voltage 66%
• Built-in Voltage 33%
• C-Si 33%
• Capacitance 33%
• Capacitance-voltage 66%
• Carrier Transport 100%
• Charge Carrier Transport 33%
• Chemical Vapor 33%
• Crystalline Si 33%
• Crystalline Silicon 100%
• Current Component 33%
• Current Flow 33%
• Current Temperature 33%
• Current-voltage 33%
• Dielectric 33%
• Diode Rectification 33%
• Electron Hopping 33%
• Emission Processes 33%
• Fermi Level 33%
• Forward Bias 100%
• Heterojunction 33%
• Heterostructure 33%
• High Breakdown Voltage 33%
• Hole Conduction 33%
• Hole Current 33%
• Hopping Conductivity 33%
• Increased Temperature 33%
• Low Temperature 33%
• Multistep Tunneling 33%
• P-type 33%
• Rectification Ratio 33%
• SiC Layer 33%
• Silicon Heterojunction 100%
• Space Charge Limited 33%
• Temperature Bias 33%
• Temperature Range 33%
• Variable Range 33%

Material Science

• Amorphous Material 100%
• Capacitance 100%
• Carrier Transport 100%
• Charge Carrier 33%
• Crystalline Material 100%
• Dielectric Material 33%
• Heterojunction 100%
• Silicon 100%