Cathodoluminescence and photoluminescence from Tb3+ in GaN powders and thin films

Joseph Laski; Jonathan H. Tao; Kailash Mishra; David Hamby; Madis Raukas; Keith Klinedinst; Joanna McKittrick; Jan B. Talbot; Nestor Perea Lopez; Gustavo Hirata

Cathodoluminescence and photoluminescence from Tb³⁺ in GaN powders and thin films

Joseph Laski, Jonathan H. Tao, Kailash Mishra, David Hamby, Madis Raukas, Keith Klinedinst, Joanna McKittrick, Jan B. Talbot, Nestor Perea Lopez, Gustavo Hirata

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report luminescence from intra-configurational f-f transitions of Tb³⁺ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using the precursor tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)terbium, while the PLD films were prepared from powder samples of GaN:Tb³⁺ prepared by a solution approach. All films yielded transitions of Tb³⁺ originating from the ⁵D₄ state of Tb³⁺ to the ⁷F₅ level as well as near bandgap emission (NBE) under cathodoluminescence (CL) excitation. The same transitions were also observed in the source powder of the PLD films, with the exceptions of the NBE at 370 nm. This indicates that the films contain lower defect level than the powders, which improves the quality of the material.

Original language	English (US)
Title of host publication	ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors
Pages	123-134
Number of pages	12
Edition	31
State	Published - Nov 25 2009
Event	Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008

Publication series

Name	ECS Transactions
Number	31
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/12/08 → 10/17/08

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Laski, J., Tao, J. H., Mishra, K., Hamby, D., Raukas, M., Klinedinst, K., McKittrick, J., Talbot, J. B., Perea Lopez, N., & Hirata, G. (2009). Cathodoluminescence and photoluminescence from Tb³⁺ in GaN powders and thin films. In ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors (31 ed., pp. 123-134). (ECS Transactions; Vol. 16, No. 31).

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title = "Cathodoluminescence and photoluminescence from Tb3+ in GaN powders and thin films",

abstract = "We report luminescence from intra-configurational f-f transitions of Tb3+ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using the precursor tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)terbium, while the PLD films were prepared from powder samples of GaN:Tb3+ prepared by a solution approach. All films yielded transitions of Tb3+ originating from the 5D4 state of Tb3+ to the 7F5 level as well as near bandgap emission (NBE) under cathodoluminescence (CL) excitation. The same transitions were also observed in the source powder of the PLD films, with the exceptions of the NBE at 370 nm. This indicates that the films contain lower defect level than the powders, which improves the quality of the material.",

author = "Joseph Laski and Tao, {Jonathan H.} and Kailash Mishra and David Hamby and Madis Raukas and Keith Klinedinst and Joanna McKittrick and Talbot, {Jan B.} and {Perea Lopez}, Nestor and Gustavo Hirata",

year = "2009",

month = nov,

day = "25",

language = "English (US)",

isbn = "9781615673056",

series = "ECS Transactions",

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pages = "123--134",

booktitle = "ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors",

edition = "31",

note = "Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",

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Laski, J, Tao, JH, Mishra, K, Hamby, D, Raukas, M, Klinedinst, K, McKittrick, J, Talbot, JB, Perea Lopez, N & Hirata, G 2009, Cathodoluminescence and photoluminescence from Tb³⁺ in GaN powders and thin films. in ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors. 31 edn, ECS Transactions, no. 31, vol. 16, pp. 123-134, Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08.

Cathodoluminescence and photoluminescence from Tb³⁺ in GaN powders and thin films. / Laski, Joseph; Tao, Jonathan H.; Mishra, Kailash et al.
ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors. 31. ed. 2009. p. 123-134 (ECS Transactions; Vol. 16, No. 31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Cathodoluminescence and photoluminescence from Tb3+ in GaN powders and thin films

AU - Laski, Joseph

AU - Tao, Jonathan H.

AU - Mishra, Kailash

AU - Hamby, David

AU - Raukas, Madis

AU - Klinedinst, Keith

AU - McKittrick, Joanna

AU - Talbot, Jan B.

AU - Perea Lopez, Nestor

AU - Hirata, Gustavo

PY - 2009/11/25

Y1 - 2009/11/25

N2 - We report luminescence from intra-configurational f-f transitions of Tb3+ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using the precursor tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)terbium, while the PLD films were prepared from powder samples of GaN:Tb3+ prepared by a solution approach. All films yielded transitions of Tb3+ originating from the 5D4 state of Tb3+ to the 7F5 level as well as near bandgap emission (NBE) under cathodoluminescence (CL) excitation. The same transitions were also observed in the source powder of the PLD films, with the exceptions of the NBE at 370 nm. This indicates that the films contain lower defect level than the powders, which improves the quality of the material.

AB - We report luminescence from intra-configurational f-f transitions of Tb3+ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using the precursor tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)terbium, while the PLD films were prepared from powder samples of GaN:Tb3+ prepared by a solution approach. All films yielded transitions of Tb3+ originating from the 5D4 state of Tb3+ to the 7F5 level as well as near bandgap emission (NBE) under cathodoluminescence (CL) excitation. The same transitions were also observed in the source powder of the PLD films, with the exceptions of the NBE at 370 nm. This indicates that the films contain lower defect level than the powders, which improves the quality of the material.

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M3 - Conference contribution

AN - SCOPUS:70450032906

SN - 9781615673056

T3 - ECS Transactions

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EP - 134

BT - ECS Transactions - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors

T2 - Physics and Chemistry of Luminescent Materials, Including the 4th Symposium on Persistent Phosphors - 214th ECS Meeting

Y2 - 12 October 2008 through 17 October 2008

ER -