Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas

L. Trabzon; O. O. Awadelkarim

doi:10.1016/S0167-9317(03)00165-5

Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas

L. Trabzon, O. O. Awadelkarim

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13 Scopus citations

Abstract

We have studied the effects of plasma treatments on the electrical, chemical and mechanical properties of fluorinated-poly-arylene-ether (FLARE) and divinylsiloxane-benzocyclobutane (BCB) polymers for use as low dielectric-constant (k) interlayer dielectrics in complementary metal-oxide-Si (CMOS). It is observed that plasma treatments induce anisotropy in k, which becomes more pronounced in FLARE. Also following the exposures, FLARE is rendered mechanically harder, whereas BCB becomes electrically leakier and the leakage current is significantly reduced by annealing in forming gas (6% H₂ and 94% N₂) at 350 °C for 30 min. These observations are explained in terms of polymer scissioning and cross-linking processes that are caused by plasma-polymer interaction mechanisms. These mechanisms include: (i) ion bombardment, (ii) ultra-violet radiation, and (iii) plasma charging. The latter mechanism is suggested to dominate the plasma-polymer interaction.

Original language	English (US)
Pages (from-to)	463-477
Number of pages	15
Journal	Microelectronic Engineering
Volume	65
Issue number	4
DOIs	https://doi.org/10.1016/S0167-9317(03)00165-5
State	Published - May 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(03)00165-5

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title = "Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas",

abstract = "We have studied the effects of plasma treatments on the electrical, chemical and mechanical properties of fluorinated-poly-arylene-ether (FLARE) and divinylsiloxane-benzocyclobutane (BCB) polymers for use as low dielectric-constant (k) interlayer dielectrics in complementary metal-oxide-Si (CMOS). It is observed that plasma treatments induce anisotropy in k, which becomes more pronounced in FLARE. Also following the exposures, FLARE is rendered mechanically harder, whereas BCB becomes electrically leakier and the leakage current is significantly reduced by annealing in forming gas (6% H2 and 94% N2) at 350 °C for 30 min. These observations are explained in terms of polymer scissioning and cross-linking processes that are caused by plasma-polymer interaction mechanisms. These mechanisms include: (i) ion bombardment, (ii) ultra-violet radiation, and (iii) plasma charging. The latter mechanism is suggested to dominate the plasma-polymer interaction.",

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AU - Trabzon, L.

AU - Awadelkarim, O. O.

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N2 - We have studied the effects of plasma treatments on the electrical, chemical and mechanical properties of fluorinated-poly-arylene-ether (FLARE) and divinylsiloxane-benzocyclobutane (BCB) polymers for use as low dielectric-constant (k) interlayer dielectrics in complementary metal-oxide-Si (CMOS). It is observed that plasma treatments induce anisotropy in k, which becomes more pronounced in FLARE. Also following the exposures, FLARE is rendered mechanically harder, whereas BCB becomes electrically leakier and the leakage current is significantly reduced by annealing in forming gas (6% H2 and 94% N2) at 350 °C for 30 min. These observations are explained in terms of polymer scissioning and cross-linking processes that are caused by plasma-polymer interaction mechanisms. These mechanisms include: (i) ion bombardment, (ii) ultra-violet radiation, and (iii) plasma charging. The latter mechanism is suggested to dominate the plasma-polymer interaction.

AB - We have studied the effects of plasma treatments on the electrical, chemical and mechanical properties of fluorinated-poly-arylene-ether (FLARE) and divinylsiloxane-benzocyclobutane (BCB) polymers for use as low dielectric-constant (k) interlayer dielectrics in complementary metal-oxide-Si (CMOS). It is observed that plasma treatments induce anisotropy in k, which becomes more pronounced in FLARE. Also following the exposures, FLARE is rendered mechanically harder, whereas BCB becomes electrically leakier and the leakage current is significantly reduced by annealing in forming gas (6% H2 and 94% N2) at 350 °C for 30 min. These observations are explained in terms of polymer scissioning and cross-linking processes that are caused by plasma-polymer interaction mechanisms. These mechanisms include: (i) ion bombardment, (ii) ultra-violet radiation, and (iii) plasma charging. The latter mechanism is suggested to dominate the plasma-polymer interaction.

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Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas

Abstract

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