Characteristics of Hf(Si,O) gate dielectrics as a function of HF content

K. Chang; Jeffrey Shallenberger; F. M. Chang; K. Shanmugasundaram; P. Roman; P. Mumbauer; Jerzy Ruzyllo

Characteristics of Hf(Si,O) gate dielectrics as a function of HF content

K. Chang, Jeffrey Shallenberger, F. M. Chang, K. Shanmugasundaram, P. Roman, P. Mumbauer, Jerzy Ruzyllo

Research output: Contribution to conference › Paper › peer-review

Abstract

In this experiment the effect of Hf content on the properties of Hf(Si,O) MOS gate dielectrics is investigated. Change of Hf content in the film is accomplished by varying Hf:Si mixing ratio in liquid precursor used for mist deposition of Hf(Si,O) films. Dielectric constant k increases as the Si content in the film decreases. Advantages of using nonstoichiometric HfSiO _x featuring 3:1 Hf:Si ratio in terms of reduced EOT were observed. On the other hand, ternary compositions of HfSiO _x did show inferior resistance to charge trapping as compared to HfO ₂.

Original language	English (US)
Pages	404-410
Number of pages	7
State	Published - Dec 1 2005
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	5/16/05 → 5/20/05

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{6ddda0d6c982410eabf98ff9d9b11cc8,

title = "Characteristics of Hf(Si,O) gate dielectrics as a function of HF content",

abstract = "In this experiment the effect of Hf content on the properties of Hf(Si,O) MOS gate dielectrics is investigated. Change of Hf content in the film is accomplished by varying Hf:Si mixing ratio in liquid precursor used for mist deposition of Hf(Si,O) films. Dielectric constant k increases as the Si content in the film decreases. Advantages of using nonstoichiometric HfSiO x featuring 3:1 Hf:Si ratio in terms of reduced EOT were observed. On the other hand, ternary compositions of HfSiO x did show inferior resistance to charge trapping as compared to HfO 2.",

author = "K. Chang and Jeffrey Shallenberger and Chang, {F. M.} and K. Shanmugasundaram and P. Roman and P. Mumbauer and Jerzy Ruzyllo",

year = "2005",

month = dec,

day = "1",

language = "English (US)",

pages = "404--410",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - Characteristics of Hf(Si,O) gate dielectrics as a function of HF content

AU - Chang, K.

AU - Shallenberger, Jeffrey

AU - Chang, F. M.

AU - Shanmugasundaram, K.

AU - Roman, P.

AU - Mumbauer, P.

AU - Ruzyllo, Jerzy

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this experiment the effect of Hf content on the properties of Hf(Si,O) MOS gate dielectrics is investigated. Change of Hf content in the film is accomplished by varying Hf:Si mixing ratio in liquid precursor used for mist deposition of Hf(Si,O) films. Dielectric constant k increases as the Si content in the film decreases. Advantages of using nonstoichiometric HfSiO x featuring 3:1 Hf:Si ratio in terms of reduced EOT were observed. On the other hand, ternary compositions of HfSiO x did show inferior resistance to charge trapping as compared to HfO 2.

AB - In this experiment the effect of Hf content on the properties of Hf(Si,O) MOS gate dielectrics is investigated. Change of Hf content in the film is accomplished by varying Hf:Si mixing ratio in liquid precursor used for mist deposition of Hf(Si,O) films. Dielectric constant k increases as the Si content in the film decreases. Advantages of using nonstoichiometric HfSiO x featuring 3:1 Hf:Si ratio in terms of reduced EOT were observed. On the other hand, ternary compositions of HfSiO x did show inferior resistance to charge trapping as compared to HfO 2.

UR - http://www.scopus.com/inward/record.url?scp=31844445688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31844445688&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844445688

SP - 404

EP - 410

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Characteristics of Hf(Si,O) gate dielectrics as a function of HF content

Abstract

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All Science Journal Classification (ASJC) codes

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