Characteristics of P-channel GaN MOSFET up to 300 °c

Sang Woo Han; Jianan Song; Rongming Chu

doi:10.1109/DRC46940.2019.9046423

Characteristics of P-channel GaN MOSFET up to 300 °c

Sang Woo Han, Jianan Song, Rongming Chu

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaN-based semiconductor technology has been successfully developed as next-generation semiconductor technology. However, the p-channel GaN device transistors still exhibit lower performance than the N-channel GaN transistors due to the difficulty in p-type doping and the low hole mobility. Some studies are being conducted to improve the performance of P-channel GaN transistors. Most of the work in this area utilized a two-dimensional hole (2DHG) channel generated in a heterojunction such as AlGaN/GaN [1] or InGaN/GaN [2].

Original language	English (US)
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-148
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046423
State	Published - Jun 2019
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	6/23/19 → 6/26/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC46940.2019.9046423

Cite this

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title = "Characteristics of P-channel GaN MOSFET up to 300 °c",

abstract = "GaN-based semiconductor technology has been successfully developed as next-generation semiconductor technology. However, the p-channel GaN device transistors still exhibit lower performance than the N-channel GaN transistors due to the difficulty in p-type doping and the low hole mobility. Some studies are being conducted to improve the performance of P-channel GaN transistors. Most of the work in this area utilized a two-dimensional hole (2DHG) channel generated in a heterojunction such as AlGaN/GaN [1] or InGaN/GaN [2].",

author = "Han, {Sang Woo} and Jianan Song and Rongming Chu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

year = "2019",

month = jun,

doi = "10.1109/DRC46940.2019.9046423",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "147--148",

booktitle = "2019 Device Research Conference, DRC 2019",

address = "United States",

}

Han, SW, Song, J & Chu, R 2019, Characteristics of P-channel GaN MOSFET up to 300 °c. in 2019 Device Research Conference, DRC 2019., 9046423, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 147-148, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 6/23/19. https://doi.org/10.1109/DRC46940.2019.9046423

Characteristics of P-channel GaN MOSFET up to 300 °c. / Han, Sang Woo; Song, Jianan; Chu, Rongming.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 147-148 9046423 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characteristics of P-channel GaN MOSFET up to 300 °c

AU - Han, Sang Woo

AU - Song, Jianan

AU - Chu, Rongming

PY - 2019/6

Y1 - 2019/6

N2 - GaN-based semiconductor technology has been successfully developed as next-generation semiconductor technology. However, the p-channel GaN device transistors still exhibit lower performance than the N-channel GaN transistors due to the difficulty in p-type doping and the low hole mobility. Some studies are being conducted to improve the performance of P-channel GaN transistors. Most of the work in this area utilized a two-dimensional hole (2DHG) channel generated in a heterojunction such as AlGaN/GaN [1] or InGaN/GaN [2].

AB - GaN-based semiconductor technology has been successfully developed as next-generation semiconductor technology. However, the p-channel GaN device transistors still exhibit lower performance than the N-channel GaN transistors due to the difficulty in p-type doping and the low hole mobility. Some studies are being conducted to improve the performance of P-channel GaN transistors. Most of the work in this area utilized a two-dimensional hole (2DHG) channel generated in a heterojunction such as AlGaN/GaN [1] or InGaN/GaN [2].

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T3 - Device Research Conference - Conference Digest, DRC

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BT - 2019 Device Research Conference, DRC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Device Research Conference, DRC 2019

Y2 - 23 June 2019 through 26 June 2019

ER -

Characteristics of P-channel GaN MOSFET up to 300 °c

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