Abstract
Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.
Original language | English (US) |
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Pages (from-to) | 539-549 |
Number of pages | 11 |
Journal | ECS Transactions |
Volume | 3 |
Issue number | 7 |
DOIs | |
State | Published - 2006 |
Event | SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006 |
All Science Journal Classification (ASJC) codes
- Engineering(all)