Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces

W. Windl, T. Liang, S. Lopatin, G. Duscher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationSiGe and Ge
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages539-549
Number of pages11
Edition7
ISBN (Electronic)1566775078
DOIs
StatePublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

Publication series

NameECS Transactions
Number7
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period10/29/0611/3/06

All Science Journal Classification (ASJC) codes

  • General Engineering

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