@inproceedings{30a6f6b2c41f4542b5a09c31a0005925,
title = "Characterization and modeling of atomically sharp {"}perfect{"} Si:Ge/SiO2 interfaces",
abstract = "Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.",
author = "W. Windl and T. Liang and S. Lopatin and G. Duscher",
year = "2006",
doi = "10.1149/1.2355851",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "539--549",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}