Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions

E. Freeman, A. Kar, N. Shukla, R. Misra, R. Engel-Herbert, D. Schlom, V. Gopalan, K. Rabe, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations


Continued physical scaling will reduce power dissipation primarily through the reduction in device capacitance; however, a far greater benefit would result if the CMOS FET could be replaced by a fundamentally new device scheme that operates under very low supply voltages. Recently, semiconductor based inter-band tunnel field effect transistors (TFET) have been explored due to their potential to achieve sub k BT/q steep switching swings, enabling low voltage operation [1]. In this work, we explore the abrupt metal to insulator transition (MIT) of vanadium dioxide (VO 2) based tunnel junction - a first step towards a correlated electron based steep switching TFET. As illustrated in Fig.1 the metal insulator transition MIT in materials with strong electron correlation can be utilized to modulate the tunnelling current by opening an energy gap around the Fermi level in the OFF-state, and a metal-insulator-metal tunnelling current by collapsing the gap in the ON-state.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Number of pages2
StatePublished - 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other70th Device Research Conference, DRC 2012
Country/TerritoryUnited States
CityUniversity Park, PA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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