TY - GEN
T1 - Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions
AU - Freeman, E.
AU - Kar, A.
AU - Shukla, N.
AU - Misra, R.
AU - Engel-Herbert, R.
AU - Schlom, D.
AU - Gopalan, V.
AU - Rabe, K.
AU - Datta, S.
PY - 2012
Y1 - 2012
N2 - Continued physical scaling will reduce power dissipation primarily through the reduction in device capacitance; however, a far greater benefit would result if the CMOS FET could be replaced by a fundamentally new device scheme that operates under very low supply voltages. Recently, semiconductor based inter-band tunnel field effect transistors (TFET) have been explored due to their potential to achieve sub k BT/q steep switching swings, enabling low voltage operation [1]. In this work, we explore the abrupt metal to insulator transition (MIT) of vanadium dioxide (VO 2) based tunnel junction - a first step towards a correlated electron based steep switching TFET. As illustrated in Fig.1 the metal insulator transition MIT in materials with strong electron correlation can be utilized to modulate the tunnelling current by opening an energy gap around the Fermi level in the OFF-state, and a metal-insulator-metal tunnelling current by collapsing the gap in the ON-state.
AB - Continued physical scaling will reduce power dissipation primarily through the reduction in device capacitance; however, a far greater benefit would result if the CMOS FET could be replaced by a fundamentally new device scheme that operates under very low supply voltages. Recently, semiconductor based inter-band tunnel field effect transistors (TFET) have been explored due to their potential to achieve sub k BT/q steep switching swings, enabling low voltage operation [1]. In this work, we explore the abrupt metal to insulator transition (MIT) of vanadium dioxide (VO 2) based tunnel junction - a first step towards a correlated electron based steep switching TFET. As illustrated in Fig.1 the metal insulator transition MIT in materials with strong electron correlation can be utilized to modulate the tunnelling current by opening an energy gap around the Fermi level in the OFF-state, and a metal-insulator-metal tunnelling current by collapsing the gap in the ON-state.
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U2 - 10.1109/DRC.2012.6257012
DO - 10.1109/DRC.2012.6257012
M3 - Conference contribution
AN - SCOPUS:84866925924
SN - 9781467311618
T3 - Device Research Conference - Conference Digest, DRC
SP - 243
EP - 244
BT - 70th Device Research Conference, DRC 2012 - Conference Digest
T2 - 70th Device Research Conference, DRC 2012
Y2 - 18 June 2012 through 20 June 2012
ER -