Characterization of Co-planar silicon transmission lines with and without slow-wave effect

Woopoung Kim; Madhavan Swaminathan

Characterization of Co-planar silicon transmission lines with and without slow-wave effect

Woopoung Kim, Madhavan Swaminathan

Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Co-planar lines on silicon substrates with and without slow-wave mode have been characterized and simulated using non-physical RLGC models extracted from VNA measurements. The difference between silicon and package transmission lines has been explained showing that the slow-wave mode cannot be represented only by the characteristic impedance and propagation constant.

Original language	English (US)
Pages	21-24
Number of pages	4
State	Published - 2004
Event	IEEE 13th Topical Meeting on Electrical Performance of Electronic Packaging - Portland, OR, United States Duration: Oct 25 2004 → Oct 27 2004

Conference

Conference	IEEE 13th Topical Meeting on Electrical Performance of Electronic Packaging
Country/Territory	United States
City	Portland, OR
Period	10/25/04 → 10/27/04

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Characterization of Co-planar silicon transmission lines with and without slow-wave effect",

abstract = "Co-planar lines on silicon substrates with and without slow-wave mode have been characterized and simulated using non-physical RLGC models extracted from VNA measurements. The difference between silicon and package transmission lines has been explained showing that the slow-wave mode cannot be represented only by the characteristic impedance and propagation constant.",

author = "Woopoung Kim and Madhavan Swaminathan",

year = "2004",

language = "English (US)",

pages = "21--24",

note = "IEEE 13th Topical Meeting on Electrical Performance of Electronic Packaging ; Conference date: 25-10-2004 Through 27-10-2004",

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TY - CONF

T1 - Characterization of Co-planar silicon transmission lines with and without slow-wave effect

AU - Kim, Woopoung

AU - Swaminathan, Madhavan

PY - 2004

Y1 - 2004

N2 - Co-planar lines on silicon substrates with and without slow-wave mode have been characterized and simulated using non-physical RLGC models extracted from VNA measurements. The difference between silicon and package transmission lines has been explained showing that the slow-wave mode cannot be represented only by the characteristic impedance and propagation constant.

AB - Co-planar lines on silicon substrates with and without slow-wave mode have been characterized and simulated using non-physical RLGC models extracted from VNA measurements. The difference between silicon and package transmission lines has been explained showing that the slow-wave mode cannot be represented only by the characteristic impedance and propagation constant.

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M3 - Paper

AN - SCOPUS:15944414595

SP - 21

EP - 24

T2 - IEEE 13th Topical Meeting on Electrical Performance of Electronic Packaging

Y2 - 25 October 2004 through 27 October 2004

ER -

Characterization of Co-planar silicon transmission lines with and without slow-wave effect

Abstract

Conference

All Science Journal Classification (ASJC) codes

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