Characterization of conductive oxides on silicon using non-contact surface charge profiling

P. Roman; D. O. Lee; M. Brubaker; E. Kamieniecki; J. Ruzyllo

doi:10.1016/S0167-9317(99)00366-4

Characterization of conductive oxides on silicon using non-contact surface charge profiling

P. Roman, D. O. Lee, M. Brubaker, E. Kamieniecki, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The density of charge associated with the silicon-oxide structure remains a figure of merit for the process as well as an indicator of the eventual MOS device performance. As the effective oxide thickness drops below 2 nm significant currents limit the effectiveness of oxide charge determination from C-V measurements. One potential solution is the SPV-based SCP (Surface Charge Profiler) method which allows measurement of total oxide/interfacial charge without making a contact to the oxide. In this paper the effectiveness of the SCP in measuring charges in ultra-thin thermal SiO₂ and conductive Ta₂O₅ films is evaluated.

Original language	English (US)
Pages (from-to)	181-184
Number of pages	4
Journal	Microelectronic Engineering
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00366-4
State	Published - Sep 1999
Event	Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger Duration: Jun 16 1999 → Jun 19 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(99)00366-4

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abstract = "The density of charge associated with the silicon-oxide structure remains a figure of merit for the process as well as an indicator of the eventual MOS device performance. As the effective oxide thickness drops below 2 nm significant currents limit the effectiveness of oxide charge determination from C-V measurements. One potential solution is the SPV-based SCP (Surface Charge Profiler) method which allows measurement of total oxide/interfacial charge without making a contact to the oxide. In this paper the effectiveness of the SCP in measuring charges in ultra-thin thermal SiO2 and conductive Ta2O5 films is evaluated.",

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AU - Roman, P.

AU - Lee, D. O.

AU - Brubaker, M.

AU - Kamieniecki, E.

AU - Ruzyllo, J.

PY - 1999/9

Y1 - 1999/9

N2 - The density of charge associated with the silicon-oxide structure remains a figure of merit for the process as well as an indicator of the eventual MOS device performance. As the effective oxide thickness drops below 2 nm significant currents limit the effectiveness of oxide charge determination from C-V measurements. One potential solution is the SPV-based SCP (Surface Charge Profiler) method which allows measurement of total oxide/interfacial charge without making a contact to the oxide. In this paper the effectiveness of the SCP in measuring charges in ultra-thin thermal SiO2 and conductive Ta2O5 films is evaluated.

AB - The density of charge associated with the silicon-oxide structure remains a figure of merit for the process as well as an indicator of the eventual MOS device performance. As the effective oxide thickness drops below 2 nm significant currents limit the effectiveness of oxide charge determination from C-V measurements. One potential solution is the SPV-based SCP (Surface Charge Profiler) method which allows measurement of total oxide/interfacial charge without making a contact to the oxide. In this paper the effectiveness of the SCP in measuring charges in ultra-thin thermal SiO2 and conductive Ta2O5 films is evaluated.

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Characterization of conductive oxides on silicon using non-contact surface charge profiling

Abstract

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