Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

G. Dolny; N. Gollagunta; S. Suliman; L. Trabzon; M. Horn; O. O. Awadelkarim; S. J. Fonash; C. M. Knoedler; J. Hao; R. Ridley; C. Kocon; T. Grebs; J. Zeng

Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

G. Dolny, N. Gollagunta, S. Suliman, L. Trabzon, M. Horn, O. O. Awadelkarim, S. J. Fonash, C. M. Knoedler, J. Hao, R. Ridley, C. Kocon, T. Grebs, J. Zeng

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.

Original language	English (US)
Pages	431-434
Number of pages	4
State	Published - 2001
Event	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: Jun 4 2001 → Jun 7 2001

Other

Other	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
Country/Territory	Japan
City	Osaka
Period	6/4/01 → 6/7/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Dolny, G., Gollagunta, N., Suliman, S., Trabzon, L., Horn, M., Awadelkarim, O. O., Fonash, S. J., Knoedler, C. M., Hao, J., Ridley, R., Kocon, C., Grebs, T., & Zeng, J. (2001). Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique. 431-434. Paper presented at 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan.

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title = "Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique",

abstract = "The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.",

author = "G. Dolny and N. Gollagunta and S. Suliman and L. Trabzon and M. Horn and Awadelkarim, {O. O.} and Fonash, {S. J.} and Knoedler, {C. M.} and J. Hao and R. Ridley and C. Kocon and T. Grebs and J. Zeng",

year = "2001",

language = "English (US)",

pages = "431--434",

note = "13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) ; Conference date: 04-06-2001 Through 07-06-2001",

}

Dolny, G, Gollagunta, N, Suliman, S, Trabzon, L, Horn, M , Awadelkarim, OO, Fonash, SJ, Knoedler, CM, Hao, J, Ridley, R, Kocon, C, Grebs, T & Zeng, J 2001, 'Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique', Paper presented at 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan, 6/4/01 - 6/7/01 pp. 431-434.

TY - CONF

T1 - Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

AU - Dolny, G.

AU - Gollagunta, N.

AU - Suliman, S.

AU - Trabzon, L.

AU - Horn, M.

AU - Awadelkarim, O. O.

AU - Fonash, S. J.

AU - Knoedler, C. M.

AU - Hao, J.

AU - Ridley, R.

AU - Kocon, C.

AU - Grebs, T.

AU - Zeng, J.

PY - 2001

Y1 - 2001

N2 - The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.

AB - The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034835659&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034835659

SP - 431

EP - 434

T2 - 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)

Y2 - 4 June 2001 through 7 June 2001

ER -

Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

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All Science Journal Classification (ASJC) codes

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