Characterization of rhenium Schottky contacts on n-type AlxGa1-xN

L. Zhou; A. T. Ping; K. Boutros; J. Redwing; I. Adesida

doi:10.1049/el:19990489

Characterization of rhenium Schottky contacts on n-type Al_xGa_1-xN

L. Zhou
, A. T. Ping
, K. Boutros
, J. Redwing
, I. Adesida

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The electrical characteristics of Re Schottky contacts on Al_xGa_1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.

Original language	English (US)
Pages (from-to)	745-746
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	9
DOIs	https://doi.org/10.1049/el:19990489
State	Published - Apr 29 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990489

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title = "Characterization of rhenium Schottky contacts on n-type AlxGa1-xN",

abstract = "The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.",

author = "L. Zhou and Ping, \{A. T.\} and K. Boutros and J. Redwing and I. Adesida",

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AU - Zhou, L.

AU - Ping, A. T.

AU - Boutros, K.

AU - Redwing, J.

AU - Adesida, I.

PY - 1999/4/29

Y1 - 1999/4/29

N2 - The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.

AB - The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.

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UR - https://www.scopus.com/pages/publications/0032637268#tab=citedBy

U2 - 10.1049/el:19990489

DO - 10.1049/el:19990489

M3 - Article

AN - SCOPUS:0032637268

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SP - 745

EP - 746

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Characterization of rhenium Schottky contacts on n-type Al_xGa_1-xN

Abstract

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