Keyphrases
Oxides
100%
Surface States
100%
Surface Characterization
100%
Transient Current
100%
Room Temperature
33%
Low Temperature
33%
Band Gap
33%
Majority Carriers
33%
MOS Capacitor
33%
Step Function
33%
Thermally Stimulated Current
33%
Conduction Band
33%
Rapid Determination
33%
Gap Region
33%
Fast Transient
33%
MOS Devices
33%
Transient Current Measurements
33%
Capture Cross Section
33%
Detectability Index
33%
Surface State Density
33%
C-V Measurement
33%
Charge Emission
33%
Device Area
33%
Moderately Low Temperatures
33%
Voltage Step
33%
Engineering
Transients
100%
Surface State
100%
Low-Temperature
66%
Detectability
33%
Room Temperature
33%
Energy Gap
33%
Charge Carrier
33%
Conduction Band
33%
Current Measurement
33%
Fast Transient
33%
Step Function
33%
Capture Cross Section
33%
Chemistry
Surface State
100%
Ambient Reaction Temperature
50%
Silicon
50%
Conduction Band
50%
Band Gap
50%
Charge Carrier
50%
Point Group C∞V
50%
Density of Surface States
50%
Thermally Stimulated Current
50%
Material Science
Silicon
100%
Density
100%
Oxide Compound
100%
Capacitor
100%
Charge Carrier
100%