Characterization of the Thermal Boundary Resistance of a Ga2O3/4H-SiC Composite Wafer

Yiwen Song; Bikramjit Chatterjee; Craig McGray; Sarit Zhukovsky; Jacob H. Leach; Tina Hess; Brian M. Foley; Sukwon Choi

doi:10.1109/ITherm45881.2020.9190287

Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer

Yiwen Song, Bikramjit Chatterjee, Craig McGray, Sarit Zhukovsky, Jacob H. Leach, Tina Hess, Brian M. Foley, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The β-gallium oxide (Ga2O3) material system offers the potential to dramatically improve the electrical performance and cost-effectiveness of next-generation power electronics. This is because of its ultra-wide bandgap (~4.8 eV) and the availability of high-quality single-crystal bulk substrates. However, the low thermal conductivity of Ga2O3 (11-27 W/m-K) implies that significant thermal challenges need to be overcome to commercialize Ga2O3 devices. In the present work, a single crystal (010) Ga2O3 wafer was integrated with a 4H-SiC substrate via fusion bonding to address this concern of poor thermal conductivity. A differential steady-state thermoreflectance method was established to measure the thermal boundary resistance at the Ga2O3/SiC interface (100 m2K/GW), which has yet to be reported due to the limited probing depth of conventional frequency- and time-domain thermoreflectance techniques.

Original language	English (US)
Title of host publication	Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020
Publisher	IEEE Computer Society
Pages	154-157
Number of pages	4
ISBN (Electronic)	9781728197647
DOIs	https://doi.org/10.1109/ITherm45881.2020.9190287
State	Published - Jul 2020
Event	19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020 - Virtual, Orlando, United States Duration: Jul 21 2020 → Jul 23 2020

Publication series

Name	InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM
Volume	2020-July
ISSN (Print)	1936-3958

Conference

Conference	19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020
Country/Territory	United States
City	Virtual, Orlando
Period	7/21/20 → 7/23/20

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/ITherm45881.2020.9190287

Cite this

Song, Y., Chatterjee, B., McGray, C., Zhukovsky, S., Leach, J. H., Hess, T., Foley, B. M., & Choi, S. (2020). Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer. In Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020 (pp. 154-157). Article 9190287 (InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM; Vol. 2020-July). IEEE Computer Society. https://doi.org/10.1109/ITherm45881.2020.9190287

Song, Yiwen ; Chatterjee, Bikramjit ; McGray, Craig et al. / Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer. Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020. IEEE Computer Society, 2020. pp. 154-157 (InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM).

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title = "Characterization of the Thermal Boundary Resistance of a Ga2O3/4H-SiC Composite Wafer",

abstract = "The β-gallium oxide (Ga2O3) material system offers the potential to dramatically improve the electrical performance and cost-effectiveness of next-generation power electronics. This is because of its ultra-wide bandgap (~4.8 eV) and the availability of high-quality single-crystal bulk substrates. However, the low thermal conductivity of Ga2O3 (11-27 W/m-K) implies that significant thermal challenges need to be overcome to commercialize Ga2O3 devices. In the present work, a single crystal (010) Ga2O3 wafer was integrated with a 4H-SiC substrate via fusion bonding to address this concern of poor thermal conductivity. A differential steady-state thermoreflectance method was established to measure the thermal boundary resistance at the Ga2O3/SiC interface (100 m2K/GW), which has yet to be reported due to the limited probing depth of conventional frequency- and time-domain thermoreflectance techniques.",

author = "Yiwen Song and Bikramjit Chatterjee and Craig McGray and Sarit Zhukovsky and Leach, {Jacob H.} and Tina Hess and Foley, {Brian M.} and Sukwon Choi",

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Song, Y, Chatterjee, B, McGray, C, Zhukovsky, S, Leach, JH, Hess, T, Foley, BM & Choi, S 2020, Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer. in Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020., 9190287, InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM, vol. 2020-July, IEEE Computer Society, pp. 154-157, 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020, Virtual, Orlando, United States, 7/21/20. https://doi.org/10.1109/ITherm45881.2020.9190287

Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer. / Song, Yiwen; Chatterjee, Bikramjit; McGray, Craig et al.
Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020. IEEE Computer Society, 2020. p. 154-157 9190287 (InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM; Vol. 2020-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - The β-gallium oxide (Ga2O3) material system offers the potential to dramatically improve the electrical performance and cost-effectiveness of next-generation power electronics. This is because of its ultra-wide bandgap (~4.8 eV) and the availability of high-quality single-crystal bulk substrates. However, the low thermal conductivity of Ga2O3 (11-27 W/m-K) implies that significant thermal challenges need to be overcome to commercialize Ga2O3 devices. In the present work, a single crystal (010) Ga2O3 wafer was integrated with a 4H-SiC substrate via fusion bonding to address this concern of poor thermal conductivity. A differential steady-state thermoreflectance method was established to measure the thermal boundary resistance at the Ga2O3/SiC interface (100 m2K/GW), which has yet to be reported due to the limited probing depth of conventional frequency- and time-domain thermoreflectance techniques.

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Song Y, Chatterjee B, McGray C, Zhukovsky S, Leach JH, Hess T et al. Characterization of the Thermal Boundary Resistance of a Ga₂O₃/4H-SiC Composite Wafer. In Proceedings of the 19th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2020. IEEE Computer Society. 2020. p. 154-157. 9190287. (InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM). doi: 10.1109/ITherm45881.2020.9190287