Characterization of two E' center charge traps in conventionally grown thermal SiO2 on Si

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We use electron spin resonance to characterize two E' variant charge traps in conventionally grown thermal SiO2.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages309-312
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
Country/TerritoryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint

Dive into the research topics of 'Characterization of two E' center charge traps in conventionally grown thermal SiO2 on Si'. Together they form a unique fingerprint.

Cite this