Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

J. O. Sofo; C. R. Proetto; C. A. Balseiro

doi:10.1063/1.100151

Charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field

J. O. Sofo, C. R. Proetto, C. A. Balseiro

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Abstract

We study the charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga_1-xAl_xAs-GaAs-Ga_1-xAl _xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

Original language	English (US)
Pages (from-to)	282-284
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	4
DOIs	https://doi.org/10.1063/1.100151
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100151

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title = "Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field",

abstract = "We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schr{\"o}dinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 {\AA} the charge accumulation is a strongly dependent function of the well width and the external magnetic field.",

author = "Sofo, {J. O.} and Proetto, {C. R.} and Balseiro, {C. A.}",

year = "1988",

doi = "10.1063/1.100151",

language = "English (US)",

volume = "53",

pages = "282--284",

journal = "Applied Physics Letters",

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T1 - Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

AU - Sofo, J. O.

AU - Proetto, C. R.

AU - Balseiro, C. A.

PY - 1988

Y1 - 1988

N2 - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

AB - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

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JF - Applied Physics Letters

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ER -

Charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field

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