Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

J. O. Sofo; C. R. Proetto; C. A. Balseiro

doi:10.1063/1.100151

Charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field

J. O. Sofo
, C. R. Proetto
, C. A. Balseiro

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We study the charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga_1-xAl_xAs-GaAs-Ga_1-xAl _xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

Original language	English (US)
Pages (from-to)	282-284
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	4
DOIs	https://doi.org/10.1063/1.100151
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100151

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@article{d1535375f710463584c2a944d25f71ac,

title = "Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field",

abstract = "We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schr{\"o}dinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 {\AA} the charge accumulation is a strongly dependent function of the well width and the external magnetic field.",

author = "Sofo, \{J. O.\} and Proetto, \{C. R.\} and Balseiro, \{C. A.\}",

year = "1988",

doi = "10.1063/1.100151",

language = "English (US)",

volume = "53",

pages = "282--284",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

AU - Sofo, J. O.

AU - Proetto, C. R.

AU - Balseiro, C. A.

PY - 1988

Y1 - 1988

N2 - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

AB - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

UR - https://www.scopus.com/pages/publications/36549095672

UR - https://www.scopus.com/pages/publications/36549095672#tab=citedBy

U2 - 10.1063/1.100151

DO - 10.1063/1.100151

M3 - Article

AN - SCOPUS:36549095672

SN - 0003-6951

VL - 53

SP - 282

EP - 284

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Charge distribution in GaAs-Ga_1-xAl_xAs heterostructures under an external magnetic field

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