Abstract
Hole transfer to dissolved sulfide species in liquid junction CdSe quantum dot sensitized solar cells is relatively slow when compared to electron transfer from CdSe to TiO2. Controlled exposure of cadmium chalcogenide surfaces to copper ions followed by immersion in sulfide solution promotes development of the interfacial CuxS layer, which mediates hole transfer to polysulfide electrolyte by collection of photogenerated holes from CdSe. In addition, CuxS was also found to interact directly with defect states on the CdSe surface and quench emission characteristic of electron traps resulting from selenide vacancies. Together these effects were found to work in tandem to deliver 6.6% power conversion efficiency using Mn-doped CdS and CdSe cosensitized quantum dot solar cells. Development of an n-p interfacial junction at the photoanode-electrolyte interface in quantum dot solar cells unveils new means for designing high efficiency liquid junction solar cells.
Original language | English (US) |
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Pages (from-to) | 16463-16471 |
Number of pages | 9 |
Journal | Journal of Physical Chemistry C |
Volume | 118 |
Issue number | 30 |
DOIs | |
State | Published - Jul 31 2014 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Energy
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films