Charge transport through small silicon clusters

Christopher Roland, Vincent Meunier, Brian Larade, Hong Guo

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

With a recently developed ab initio nonequilibrium Green's-function formalism, we have investigated the transport behavior of small Sin, n = 1 - 10, 13, and 20 nanoclusters between atomistic Al and Au leads. All of the clusters display metallic I-V characteristics, with typical conductances ranging between two and three (units of Go= 2e2/h). The transport properties of these cluster junctions may be understood in terms of both the band structure of the electrodes, and the molecular electronic states of the clusters as modified by the lead environment. In addition, the quantum transport properties of Si nanoclusters doped with a Na atom are also analyzed.

Original languageEnglish (US)
Article number035332
Pages (from-to)353321-353327
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number3
DOIs
StatePublished - Jul 15 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Charge transport through small silicon clusters'. Together they form a unique fingerprint.

Cite this