Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

Kyuhwan Chang; Feng Ming Chang; Jerzy Ruzyllo

doi:10.1016/j.sse.2006.08.010

Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

Kyuhwan Chang, Feng Ming Chang, Jerzy Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO₂ and HfSiO₄ formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO₂ is expected to display more stable electrical characteristics than HfSiO₄.

Original language	English (US)
Pages (from-to)	1670-1672
Number of pages	3
Journal	Solid-State Electronics
Volume	50
Issue number	9-10
DOIs	https://doi.org/10.1016/j.sse.2006.08.010
State	Published - Sep 1 2006

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.sse.2006.08.010

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abstract = "In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4.",

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T1 - Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

AU - Chang, Kyuhwan

AU - Chang, Feng Ming

AU - Ruzyllo, Jerzy

PY - 2006/9/1

Y1 - 2006/9/1

N2 - In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4.

AB - In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4.

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9-10

ER -

Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

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