Chemi-mechanical polishing of on-axis semi-insulating SiC substrates

V. D. Heydemann, W. J. Everson, R. D. Gamble, D. W. Snyder, M. Skowronski

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41 Scopus citations


Conventional colloidal silica (CS) chemi-mechanical polishing (CMP) of Si-face SiC substrates typically results in a low material removal rate (MRR<0.1μm/h). In this study, the chemical surface oxidation and mechanical removal of the oxide layer during CMP of on-axis semi-insulating (SI) 6H SiC substrates, and the effect on material removal rate and surface roughness were investigated separately by addition of (a) compatible oxidizers, (b) abrasives and (c) both oxidizers and abrasives to the CS slurry. Neither oxidizer nor soft abrasive addition individually resulted in a significant MRR increase, yet both increased the substrate surface roughness. The addition of nano-size diamond abrasive (0.1μm grain size) to the CS slurry resulted in a MRR of 0.60μm/h, a l0x increase over CS CMP, and produced substrates with a Ra surface roughness of 5.5Å. The addition of 0.1μm diamond abrasive and sodium hypochlorite oxidizer to the CS slurry resulted in a MRR increase to 0.92μm/h and produced substrates with a Ra surface roughness of 5.2Å.

Original languageEnglish (US)
Pages (from-to)805-808
Number of pages4
JournalMaterials Science Forum
Issue numberII
StatePublished - Jan 1 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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