Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

Roman Engel-Herbert; Yoontae Hwang; James M. LeBeau; Yan Zheng; Susanne Stemmer

Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO₂ on In_0.53Ga_0.47As

Roman Engel-Herbert, Yoontae Hwang, James M. LeBeau, Yan Zheng, Susanne Stemmer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the growth of high-permittivity (k) TiO₂ thin films on In_0.53Ga_0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In_0.53Ga _0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO₂/In_0.53Ga_0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

Original language	English (US)
Title of host publication	CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Pages	111-117
Number of pages	7
State	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 16 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1155
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/14/09 → 4/16/09

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{8e29c439a6ef40f2980e25c91ad37eee,

title = "Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As",

abstract = "We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.",

author = "Roman Engel-Herbert and Yoontae Hwang and LeBeau, {James M.} and Yan Zheng and Susanne Stemmer",

year = "2009",

language = "English (US)",

isbn = "9781605111285",

series = "Materials Research Society Symposium Proceedings",

pages = "111--117",

booktitle = "CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications",

note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 16-04-2009",

}

Engel-Herbert, R, Hwang, Y, LeBeau, JM, Zheng, Y & Stemmer, S 2009, Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO₂ on In_0.53Ga_0.47As. in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society Symposium Proceedings, vol. 1155, pp. 111-117, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.

Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO₂ on In_0.53Ga_0.47As. / Engel-Herbert, Roman; Hwang, Yoontae; LeBeau, James M. et al.
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. 2009. p. 111-117 (Materials Research Society Symposium Proceedings; Vol. 1155).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Chemical beam deposition of high-k gate dielectrics on III-V semiconductors

T2 - 2009 MRS Spring Meeting

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AU - Hwang, Yoontae

AU - LeBeau, James M.

AU - Zheng, Yan

AU - Stemmer, Susanne

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N2 - We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

AB - We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

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