Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

Roman Engel-Herbert, Yoontae Hwang, James M. LeBeau, Yan Zheng, Susanne Stemmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

Original languageEnglish (US)
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Number of pages7
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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