Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

Cui Zu Chang; Peizhe Tang; Yi Lin Wang; Xiao Feng; Kang Li; Zuocheng Zhang; Yayu Wang; Li Li Wang; Xi Chen; Chaoxing Liu; Wenhui Duan; Ke He; Xu Cun Ma; Qi Kun Xue

doi:10.1103/PhysRevLett.112.056801

Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

Cui Zu Chang, Peizhe Tang, Yi Lin Wang, Xiao Feng, Kang Li, Zuocheng Zhang, Yayu Wang, Li Li Wang, Xi Chen, Chaoxing Liu, Wenhui Duan, Ke He, Xu Cun Ma, Qi Kun Xue

Physics

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107 Scopus citations

Abstract

With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

Original language	English (US)
Article number	056801
Journal	Physical review letters
Volume	112
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.112.056801
State	Published - Feb 6 2014

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.112.056801

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Chang, C. Z., Tang, P., Wang, Y. L., Feng, X., Li, K., Zhang, Z., Wang, Y., Wang, L. L., Chen, X., Liu, C., Duan, W., He, K., Ma, X. C., & Xue, Q. K. (2014). Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms. Physical review letters, 112(5), Article 056801. https://doi.org/10.1103/PhysRevLett.112.056801

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title = "Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms",

abstract = "With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.",

author = "Chang, {Cui Zu} and Peizhe Tang and Wang, {Yi Lin} and Xiao Feng and Kang Li and Zuocheng Zhang and Yayu Wang and Wang, {Li Li} and Xi Chen and Chaoxing Liu and Wenhui Duan and Ke He and Ma, {Xu Cun} and Xue, {Qi Kun}",

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doi = "10.1103/PhysRevLett.112.056801",

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AU - Chang, Cui Zu

AU - Tang, Peizhe

AU - Wang, Yi Lin

AU - Feng, Xiao

AU - Li, Kang

AU - Zhang, Zuocheng

AU - Wang, Yayu

AU - Wang, Li Li

AU - Chen, Xi

AU - Liu, Chaoxing

AU - Duan, Wenhui

AU - He, Ke

AU - Ma, Xu Cun

AU - Xue, Qi Kun

PY - 2014/2/6

Y1 - 2014/2/6

N2 - With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

AB - With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

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Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

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