Chemical solution deposition of CaCu 3Ti 4O 12 thin films

Mark D. Losego; Jon-Paul Maria

Chemical solution deposition of CaCu ₃Ti ₄O ₁₂ thin films

Mark D. Losego, Jon-Paul Maria

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A chemical solution deposition method is used to prepare calcium copper titanate thin films on platinized silicon substrates. The impact of annealing temperature and stoichiometry on phase formation and dielectric properties is investigated. Through x-ray diffraction analysis, an intermediary phase, identified here as Cu ₃TiO ₄, is shown to emerge before the crystallization of CaCu ₃Ti ₄O ₁₂ at 725°C. The temperature at which conversion occurred was mildly dependent on copper stoichiometry. Permittivities between 200 and 400 were observed for all cases; these values are significantly smaller than others reported recently. Field dependent measurements show a voltage variable permittivity which is linked to mobile charges in the CCT crystals and Schottky barriers at both electrode interfaces.

Original language	English (US)
Pages (from-to)	1-7
Number of pages	7
Journal	Ceramic Transactions
Volume	162
State	Published - Aug 22 2005
Event	106th Annual Meeting of the American Ceramic Society - Indianapolis, IN, United States Duration: Apr 18 2004 → Apr 21 2004

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

Cite this

@article{a42ee819b15b428abc5464afb2fb4da2,

title = "Chemical solution deposition of CaCu 3Ti 4O 12 thin films",

abstract = "A chemical solution deposition method is used to prepare calcium copper titanate thin films on platinized silicon substrates. The impact of annealing temperature and stoichiometry on phase formation and dielectric properties is investigated. Through x-ray diffraction analysis, an intermediary phase, identified here as Cu 3TiO 4, is shown to emerge before the crystallization of CaCu 3Ti 4O 12 at 725°C. The temperature at which conversion occurred was mildly dependent on copper stoichiometry. Permittivities between 200 and 400 were observed for all cases; these values are significantly smaller than others reported recently. Field dependent measurements show a voltage variable permittivity which is linked to mobile charges in the CCT crystals and Schottky barriers at both electrode interfaces.",

author = "Losego, {Mark D.} and Jon-Paul Maria",

year = "2005",

month = aug,

day = "22",

language = "English (US)",

volume = "162",

pages = "1--7",

journal = "Ceramic Transactions",

issn = "1042-1122",

publisher = "Wiley-Blackwell",

note = "106th Annual Meeting of the American Ceramic Society ; Conference date: 18-04-2004 Through 21-04-2004",

}

TY - JOUR

T1 - Chemical solution deposition of CaCu 3Ti 4O 12 thin films

AU - Losego, Mark D.

AU - Maria, Jon-Paul

PY - 2005/8/22

Y1 - 2005/8/22

N2 - A chemical solution deposition method is used to prepare calcium copper titanate thin films on platinized silicon substrates. The impact of annealing temperature and stoichiometry on phase formation and dielectric properties is investigated. Through x-ray diffraction analysis, an intermediary phase, identified here as Cu 3TiO 4, is shown to emerge before the crystallization of CaCu 3Ti 4O 12 at 725°C. The temperature at which conversion occurred was mildly dependent on copper stoichiometry. Permittivities between 200 and 400 were observed for all cases; these values are significantly smaller than others reported recently. Field dependent measurements show a voltage variable permittivity which is linked to mobile charges in the CCT crystals and Schottky barriers at both electrode interfaces.

AB - A chemical solution deposition method is used to prepare calcium copper titanate thin films on platinized silicon substrates. The impact of annealing temperature and stoichiometry on phase formation and dielectric properties is investigated. Through x-ray diffraction analysis, an intermediary phase, identified here as Cu 3TiO 4, is shown to emerge before the crystallization of CaCu 3Ti 4O 12 at 725°C. The temperature at which conversion occurred was mildly dependent on copper stoichiometry. Permittivities between 200 and 400 were observed for all cases; these values are significantly smaller than others reported recently. Field dependent measurements show a voltage variable permittivity which is linked to mobile charges in the CCT crystals and Schottky barriers at both electrode interfaces.

UR - http://www.scopus.com/inward/record.url?scp=84860989835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860989835&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:84860989835

SN - 1042-1122

VL - 162

SP - 1

EP - 7

JO - Ceramic Transactions

JF - Ceramic Transactions

T2 - 106th Annual Meeting of the American Ceramic Society

Y2 - 18 April 2004 through 21 April 2004

ER -

Chemical solution deposition of CaCu ₃Ti ₄O ₁₂ thin films

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this