Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition

J. R.S. Brownson; C. Georges; Gerardo Larramona; C. Lévy-Clément

doi:10.1149/1.2731227

Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition

J. R.S. Brownson, C. Georges, Gerardo Larramona, C. Lévy-Clément

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Galvanostatic deposition of tin monosulfide thin films (δ-SnS phase) on transparent conductive glass was studied. Uniform films were deposited in aqueous baths with tartaric acid. Cyclic voltammetry suggested tin-tartrate complexes were crucial to film electrodeposition, suppressing tin metal reduction in favor of sulfur species reduction. X-ray diffraction showed primitive orthorhombic symmetry for δ-SnS (a = 11.380 Å, b= 4.029 Å, c = 4.837 Å). δ-SnS was converted to α-SnS (a = 11.172 Å, b = 3.994 Å c = 4.311 Å) following annealing at ∼ 270 °C in Ar(g). Characterizations of the as-deposited films confirmed 1:1 Sn/S. The δ-SnS structure was consistent over a range of deposition temperatures (50, 70, and 90 °C). UV/Vis spectrometry confirmed increased disorder in films deposited at 50 °C. A direct allowed optical band gap transition of lower energy for the δ-SnS phase (1.05 eV) was obtained compared to that for α-SnS (direct, 1.2 eV).

Original language	English (US)
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Publisher	Electrochemical Society Inc.
Pages	587-597
Number of pages	11
Edition	2
ISBN (Electronic)	9781566775519
ISBN (Print)	9781566775519
DOIs	https://doi.org/10.1149/1.2731227
State	Published - 2007
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: May 6 2007 → May 10 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	5/6/07 → 5/10/07

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2731227

Cite this

Brownson, J. R. S., Georges, C., Larramona, G., & Lévy-Clément, C. (2007). Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 587-597). (ECS Transactions; Vol. 6, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2731227

Brownson, J. R.S. ; Georges, C. ; Larramona, Gerardo et al. / Chemistry of δ-SnS : New tin monosulflde polymorph thin films from galvanostatic electrodeposition. ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. pp. 587-597 (ECS Transactions; 2).

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title = "Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition",

abstract = "Galvanostatic deposition of tin monosulfide thin films (δ-SnS phase) on transparent conductive glass was studied. Uniform films were deposited in aqueous baths with tartaric acid. Cyclic voltammetry suggested tin-tartrate complexes were crucial to film electrodeposition, suppressing tin metal reduction in favor of sulfur species reduction. X-ray diffraction showed primitive orthorhombic symmetry for δ-SnS (a = 11.380 {\AA}, b= 4.029 {\AA}, c = 4.837 {\AA}). δ-SnS was converted to α-SnS (a = 11.172 {\AA}, b = 3.994 {\AA} c = 4.311 {\AA}) following annealing at ∼ 270 °C in Ar(g). Characterizations of the as-deposited films confirmed 1:1 Sn/S. The δ-SnS structure was consistent over a range of deposition temperatures (50, 70, and 90 °C). UV/Vis spectrometry confirmed increased disorder in films deposited at 50 °C. A direct allowed optical band gap transition of lower energy for the δ-SnS phase (1.05 eV) was obtained compared to that for α-SnS (direct, 1.2 eV).",

author = "Brownson, {J. R.S.} and C. Georges and Gerardo Larramona and C. L{\'e}vy-Cl{\'e}ment",

year = "2007",

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language = "English (US)",

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series = "ECS Transactions",

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note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

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Brownson, JRS, Georges, C, Larramona, G & Lévy-Clément, C 2007, Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, Electrochemical Society Inc., pp. 587-597, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 5/6/07. https://doi.org/10.1149/1.2731227

Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition. / Brownson, J. R.S.; Georges, C.; Larramona, Gerardo et al.
ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. p. 587-597 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Chemistry of δ-SnS

T2 - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting

AU - Brownson, J. R.S.

AU - Georges, C.

AU - Larramona, Gerardo

AU - Lévy-Clément, C.

PY - 2007

Y1 - 2007

N2 - Galvanostatic deposition of tin monosulfide thin films (δ-SnS phase) on transparent conductive glass was studied. Uniform films were deposited in aqueous baths with tartaric acid. Cyclic voltammetry suggested tin-tartrate complexes were crucial to film electrodeposition, suppressing tin metal reduction in favor of sulfur species reduction. X-ray diffraction showed primitive orthorhombic symmetry for δ-SnS (a = 11.380 Å, b= 4.029 Å, c = 4.837 Å). δ-SnS was converted to α-SnS (a = 11.172 Å, b = 3.994 Å c = 4.311 Å) following annealing at ∼ 270 °C in Ar(g). Characterizations of the as-deposited films confirmed 1:1 Sn/S. The δ-SnS structure was consistent over a range of deposition temperatures (50, 70, and 90 °C). UV/Vis spectrometry confirmed increased disorder in films deposited at 50 °C. A direct allowed optical band gap transition of lower energy for the δ-SnS phase (1.05 eV) was obtained compared to that for α-SnS (direct, 1.2 eV).

AB - Galvanostatic deposition of tin monosulfide thin films (δ-SnS phase) on transparent conductive glass was studied. Uniform films were deposited in aqueous baths with tartaric acid. Cyclic voltammetry suggested tin-tartrate complexes were crucial to film electrodeposition, suppressing tin metal reduction in favor of sulfur species reduction. X-ray diffraction showed primitive orthorhombic symmetry for δ-SnS (a = 11.380 Å, b= 4.029 Å, c = 4.837 Å). δ-SnS was converted to α-SnS (a = 11.172 Å, b = 3.994 Å c = 4.311 Å) following annealing at ∼ 270 °C in Ar(g). Characterizations of the as-deposited films confirmed 1:1 Sn/S. The δ-SnS structure was consistent over a range of deposition temperatures (50, 70, and 90 °C). UV/Vis spectrometry confirmed increased disorder in films deposited at 50 °C. A direct allowed optical band gap transition of lower energy for the δ-SnS phase (1.05 eV) was obtained compared to that for α-SnS (direct, 1.2 eV).

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DO - 10.1149/1.2731227

M3 - Conference contribution

AN - SCOPUS:45749117560

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T3 - ECS Transactions

SP - 587

EP - 597

BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

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Y2 - 6 May 2007 through 10 May 2007

ER -

Brownson JRS, Georges C, Larramona G, Lévy-Clément C. Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. Electrochemical Society Inc. 2007. p. 587-597. (ECS Transactions; 2). doi: 10.1149/1.2731227

Chemistry of δ-SnS: New tin monosulflde polymorph thin films from galvanostatic electrodeposition

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