Abstract
We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2706-2707 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 130 |
| Issue number | 9 |
| DOIs | |
| State | Published - Mar 5 2008 |
All Science Journal Classification (ASJC) codes
- Catalysis
- General Chemistry
- Biochemistry
- Colloid and Surface Chemistry