CIENKIE WARSLWY TLENKOWE DLA UKLADOW MOS VLSI.

Andrzej Jakubowski; Jerzy Ruzyllo

CIENKIE WARSLWY TLENKOWE DLA UKLADOW MOS VLSI.

Translated title of the contribution: Oxide Thin Films for MOS VLSI Circuits.

Andrzej Jakubowski, Jerzy Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

Abstract

Problems connected with the introduction of very thin oxide films in the technology of MOS-VLSI circuits are considered. Reasons are given for the reduction of dielectric thickness in order to improve parameters of MOS circuits. Effects causing degradation of parameters of devices with very thin dielectrics are discussed, along with limitations resulting from injection of hot carriers and density increase of defects causing breakdown of the oxide.

Translated title of the contribution	Oxide Thin Films for MOS VLSI Circuits.
Original language	Polish
Pages (from-to)	15-19
Number of pages	5
Journal	Elektronika
Volume	25
Issue number	7
State	Published - 1984

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@article{ace6f9c67a0e480e8386de665d911cc2,

title = "CIENKIE WARSLWY TLENKOWE DLA UKLADOW MOS VLSI.",

abstract = "Problems connected with the introduction of very thin oxide films in the technology of MOS-VLSI circuits are considered. Reasons are given for the reduction of dielectric thickness in order to improve parameters of MOS circuits. Effects causing degradation of parameters of devices with very thin dielectrics are discussed, along with limitations resulting from injection of hot carriers and density increase of defects causing breakdown of the oxide.",

author = "Andrzej Jakubowski and Jerzy Ruzyllo",

year = "1984",

language = "Polish",

volume = "25",

pages = "15--19",

journal = "Elektronika",

issn = "0033-2089",

number = "7",

}

TY - JOUR

T1 - CIENKIE WARSLWY TLENKOWE DLA UKLADOW MOS VLSI.

AU - Jakubowski, Andrzej

AU - Ruzyllo, Jerzy

PY - 1984

Y1 - 1984

N2 - Problems connected with the introduction of very thin oxide films in the technology of MOS-VLSI circuits are considered. Reasons are given for the reduction of dielectric thickness in order to improve parameters of MOS circuits. Effects causing degradation of parameters of devices with very thin dielectrics are discussed, along with limitations resulting from injection of hot carriers and density increase of defects causing breakdown of the oxide.

AB - Problems connected with the introduction of very thin oxide films in the technology of MOS-VLSI circuits are considered. Reasons are given for the reduction of dielectric thickness in order to improve parameters of MOS circuits. Effects causing degradation of parameters of devices with very thin dielectrics are discussed, along with limitations resulting from injection of hot carriers and density increase of defects causing breakdown of the oxide.

UR - http://www.scopus.com/inward/record.url?scp=0021699118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021699118&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021699118

SN - 0033-2089

VL - 25

SP - 15

EP - 19

JO - Elektronika

JF - Elektronika

IS - 7

ER -

CIENKIE WARSLWY TLENKOWE DLA UKLADOW MOS VLSI.

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this