Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS

R. C. Callarotti; P. E. Schmidt; M. Octavio; A. Sa-Neto; P. Esqueda

doi:10.1016/0022-3093(80)90349-X

Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS

R. C. Callarotti, P. E. Schmidt, M. Octavio, A. Sa-Neto, P. Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

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Abstract

We compare our correlations between theoretical circuit models and experimental results for OTS devices and DIACS while they undergo relaxation oscillations. OTS devices are of the type OFF-?-ON while DIACS show well defined OFF and negative resistance (NR) states. The excellent agreement between theory and experiments in DIACS gives additional support to the use of our circuital models in the interpretation of our OTS data. Experimental results for DIACS include dc and pulsed I-V characteristics, low level ac response, as well as relaxation and quasi-sinusoidal oscillations. We discuss the lack of experimentally observed quasi-sinusoidal oscillations in OTS in view of previous interpretation of chalcogenide threshold switches as time varying systems as opposed to OFF-NR-ON devices.

Original language	English (US)
Pages (from-to)	1117-1122
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	35-36
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(80)90349-X
State	Published - Jan 1 1980

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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title = "Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS",

abstract = "We compare our correlations between theoretical circuit models and experimental results for OTS devices and DIACS while they undergo relaxation oscillations. OTS devices are of the type OFF-?-ON while DIACS show well defined OFF and negative resistance (NR) states. The excellent agreement between theory and experiments in DIACS gives additional support to the use of our circuital models in the interpretation of our OTS data. Experimental results for DIACS include dc and pulsed I-V characteristics, low level ac response, as well as relaxation and quasi-sinusoidal oscillations. We discuss the lack of experimentally observed quasi-sinusoidal oscillations in OTS in view of previous interpretation of chalcogenide threshold switches as time varying systems as opposed to OFF-NR-ON devices.",

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T1 - Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS

AU - Callarotti, R. C.

AU - Schmidt, P. E.

AU - Octavio, M.

AU - Sa-Neto, A.

AU - Esqueda, P.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - We compare our correlations between theoretical circuit models and experimental results for OTS devices and DIACS while they undergo relaxation oscillations. OTS devices are of the type OFF-?-ON while DIACS show well defined OFF and negative resistance (NR) states. The excellent agreement between theory and experiments in DIACS gives additional support to the use of our circuital models in the interpretation of our OTS data. Experimental results for DIACS include dc and pulsed I-V characteristics, low level ac response, as well as relaxation and quasi-sinusoidal oscillations. We discuss the lack of experimentally observed quasi-sinusoidal oscillations in OTS in view of previous interpretation of chalcogenide threshold switches as time varying systems as opposed to OFF-NR-ON devices.

AB - We compare our correlations between theoretical circuit models and experimental results for OTS devices and DIACS while they undergo relaxation oscillations. OTS devices are of the type OFF-?-ON while DIACS show well defined OFF and negative resistance (NR) states. The excellent agreement between theory and experiments in DIACS gives additional support to the use of our circuital models in the interpretation of our OTS data. Experimental results for DIACS include dc and pulsed I-V characteristics, low level ac response, as well as relaxation and quasi-sinusoidal oscillations. We discuss the lack of experimentally observed quasi-sinusoidal oscillations in OTS in view of previous interpretation of chalcogenide threshold switches as time varying systems as opposed to OFF-NR-ON devices.

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Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS

Abstract

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