CMOS and interconnect reliability - Advanced gate dielectric reliability

Research output: Contribution to journal › Editorial › peer-review

Original language	English (US)
Article number	4154311
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346892
State	Published - Dec 1 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: Dec 10 2006 → Dec 13 2006

All Science Journal Classification (ASJC) codes

@article{2ffbf079fbfd4a968be7564723625801,

title = "CMOS and interconnect reliability - Advanced gate dielectric reliability",

author = "Patrick Lenahan and John Suehle",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IEDM.2006.346892",

language = "English (US)",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

TY - JOUR

T1 - CMOS and interconnect reliability - Advanced gate dielectric reliability

AU - Lenahan, Patrick

AU - Suehle, John

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=46049097593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049097593&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346892

DO - 10.1109/IEDM.2006.346892

M3 - Editorial

AN - SCOPUS:46049097593

SN - 0163-1918

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4154311

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -