TY - JOUR
T1 - CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays
AU - Mallick, Antik
AU - Zhao, Zijian
AU - Bashar, Mohammad Khairul
AU - Alam, Shamiul
AU - Islam, Md Mazharul
AU - Xiao, Yi
AU - Xu, Yixin
AU - Aziz, Ahmedullah
AU - Narayanan, Vijaykrishnan
AU - Ni, Kai
AU - Shukla, Nikhil
N1 - Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for accelerating computationally intractable problems. Besides the need for realizing compact Ising spins, the implementation of the coupling network, which describes the spin interaction, is also a potential bottleneck in the scalability of such platforms. Therefore, in this work, we propose an Ising machine platform that exploits the novel behavior of compact bi-stable CMOS-latches (cross-coupled inverters) as classical Ising spins interacting through highly scalable and CMOS-process compatible ferroelectric-HfO2-based Ferroelectric FETs (FeFETs) which act as coupling elements. We experimentally demonstrate the prototype building blocks of this system, and evaluate the scaling behavior of the system using simulations. Our work not only provides a pathway to realizing CMOS-compatible designs but also to overcoming their scaling challenges.
AB - Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for accelerating computationally intractable problems. Besides the need for realizing compact Ising spins, the implementation of the coupling network, which describes the spin interaction, is also a potential bottleneck in the scalability of such platforms. Therefore, in this work, we propose an Ising machine platform that exploits the novel behavior of compact bi-stable CMOS-latches (cross-coupled inverters) as classical Ising spins interacting through highly scalable and CMOS-process compatible ferroelectric-HfO2-based Ferroelectric FETs (FeFETs) which act as coupling elements. We experimentally demonstrate the prototype building blocks of this system, and evaluate the scaling behavior of the system using simulations. Our work not only provides a pathway to realizing CMOS-compatible designs but also to overcoming their scaling challenges.
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U2 - 10.1038/s41598-023-28217-8
DO - 10.1038/s41598-023-28217-8
M3 - Article
C2 - 36707539
AN - SCOPUS:85146954711
SN - 2045-2322
VL - 13
JO - Scientific reports
JF - Scientific reports
IS - 1
M1 - 1515
ER -