Co-deposition of MoS₂ films by reactive sputtering and formation of tree-like structures

Transition metal dichalcogenides are versatile layered materials with potential applications ranging from optoelectronic devices to water splitting. Top-down fabrication methods such as exfoliation are not practical for a large-scale production of high-quality devices: a bottom-up approach such as sputtering, a low-temperature deposition method, is more suitable. However, due to its anisotropic nature, the growth mechanism of molybdenum disulfide (MoS₂) via sputtering is complex and remains to be investigated in detail. In this paper, we study the growth of MoS₂ films co-deposited by using a sulfur (S) hot-lip cell and a molybdenum (Mo) sputtering target via reactive sputtering. The impact of S partial pressure on the structure and morphology of MoS₂ films was systematically characterized, and it was observed that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure.