Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines

T. Nogami, R. Patlolla, J. Kelly, B. Briggs, H. Huang, J. Demarest, J. Li, R. Hengstebeck, X. Zhang, G. Lian, B. Peethala, P. Bhosale, J. Maniscalco, H. Shobha, S. Nguyen, P. McLaughlin, T. Standaert, D. Canaperi, D. Edelstein, V. Paruchuri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to reduce Co volume fraction, through-Cobalt Self-Formed-Barrier (tCoSFB) was employed to thin down TaN barrier to <1 nm which works as an adhesion layer for Co lines. Line R of fine Co lines was reduced by 30% successfully. The Co/tCoSFB-Cu composite interconnect system is promising to achieve low line R for both fine and wide lines simultaneously in 7nm BEOL and beyond.

Original languageEnglish (US)
Title of host publicationIITC 2017 - 2017 IEEE International Interconnect Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509064731
DOIs
StatePublished - Jul 5 2017
Event2017 IEEE International Interconnect Technology Conference, IITC 2017 - Hsinchu, Taiwan, Province of China
Duration: May 16 2017May 18 2017

Publication series

NameIITC 2017 - 2017 IEEE International Interconnect Technology Conference

Conference

Conference2017 IEEE International Interconnect Technology Conference, IITC 2017
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period5/16/175/18/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Electrical and Electronic Engineering

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