Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines

  • T. Nogami
  • , R. Patlolla
  • , J. Kelly
  • , B. Briggs
  • , H. Huang
  • , J. Demarest
  • , J. Li
  • , R. Hengstebeck
  • , X. Zhang
  • , G. Lian
  • , B. Peethala
  • , P. Bhosale
  • , J. Maniscalco
  • , H. Shobha
  • , S. Nguyen
  • , P. McLaughlin
  • , T. Standaert
  • , D. Canaperi
  • , D. Edelstein
  • , V. Paruchuri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to reduce Co volume fraction, through-Cobalt Self-Formed-Barrier (tCoSFB) was employed to thin down TaN barrier to <1 nm which works as an adhesion layer for Co lines. Line R of fine Co lines was reduced by 30% successfully. The Co/tCoSFB-Cu composite interconnect system is promising to achieve low line R for both fine and wide lines simultaneously in 7nm BEOL and beyond.

Original languageEnglish (US)
Title of host publicationIITC 2017 - 2017 IEEE International Interconnect Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509064731
DOIs
StatePublished - Jul 5 2017
Event2017 IEEE International Interconnect Technology Conference, IITC 2017 - Hsinchu, Taiwan, Province of China
Duration: May 16 2017May 18 2017

Publication series

NameIITC 2017 - 2017 IEEE International Interconnect Technology Conference

Conference

Conference2017 IEEE International Interconnect Technology Conference, IITC 2017
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period5/16/175/18/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Electrical and Electronic Engineering

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