Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch

Ahmedullah Aziz; Nikhil Shukla; Alan Seabaugh; Suman Datta; Sumeet Gupta

doi:10.1109/DRC.2018.8442270

Cockcroft-walton multiplier based on unipolar Ag/HfO₂/Pt threshold switch

Ahmedullah Aziz, Nikhil Shukla, Alan Seabaugh, Suman Datta, Sumeet Gupta

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO₂/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~10⁷) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO₂/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO₂/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO₂/Pt.

Original language	English (US)
Title of host publication	2018 76th Device Research Conference, DRC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538630280
DOIs	https://doi.org/10.1109/DRC.2018.8442270
State	Published - Aug 20 2018
Event	76th Device Research Conference, DRC 2018 - Santa Barbara, United States Duration: Jun 24 2018 → Jun 27 2018

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2018-June
ISSN (Print)	1548-3770

Other

Other	76th Device Research Conference, DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	6/24/18 → 6/27/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2018.8442270

Cite this

Aziz, A., Shukla, N., Seabaugh, A., Datta, S., & Gupta, S. (2018). Cockcroft-walton multiplier based on unipolar Ag/HfO₂/Pt threshold switch. In 2018 76th Device Research Conference, DRC 2018 Article 8442270 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442270

@inproceedings{5dd409eab10d410dba36deb80334d17b,

title = "Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch",

abstract = "Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.",

author = "Ahmedullah Aziz and Nikhil Shukla and Alan Seabaugh and Suman Datta and Sumeet Gupta",

note = "Funding Information: Acknowledgement: This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA. Publisher Copyright: {\textcopyright} 2018 IEEE.; 76th Device Research Conference, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",

year = "2018",

month = aug,

day = "20",

doi = "10.1109/DRC.2018.8442270",

language = "English (US)",

isbn = "9781538630280",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 76th Device Research Conference, DRC 2018",

address = "United States",

}

Aziz, A, Shukla, N, Seabaugh, A, Datta, S & Gupta, S 2018, Cockcroft-walton multiplier based on unipolar Ag/HfO₂/Pt threshold switch. in 2018 76th Device Research Conference, DRC 2018., 8442270, Device Research Conference - Conference Digest, DRC, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442270

Cockcroft-walton multiplier based on unipolar Ag/HfO₂/Pt threshold switch. / Aziz, Ahmedullah; Shukla, Nikhil; Seabaugh, Alan et al.
2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8442270 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch

AU - Aziz, Ahmedullah

AU - Shukla, Nikhil

AU - Seabaugh, Alan

AU - Datta, Suman

AU - Gupta, Sumeet

N1 - Funding Information: Acknowledgement: This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA. Publisher Copyright: © 2018 IEEE.

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.

AB - Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.

UR - http://www.scopus.com/inward/record.url?scp=85053218288&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053218288&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442270

DO - 10.1109/DRC.2018.8442270

M3 - Conference contribution

AN - SCOPUS:85053218288

SN - 9781538630280

T3 - Device Research Conference - Conference Digest, DRC

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 76th Device Research Conference, DRC 2018

Y2 - 24 June 2018 through 27 June 2018

ER -