Abstract
Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ∼3.1 nm corresponding to a cavity quality factor of ∼500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.
Original language | English (US) |
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Pages (from-to) | 26394-26398 |
Number of pages | 5 |
Journal | Optics Express |
Volume | 19 |
Issue number | 27 |
DOIs | |
State | Published - Dec 19 2011 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics